一种用于CMOS图像传感器的高精度抗辐射自适应斜坡产生电路设计  

Design of High Precision Radiation-Hardened Adaptive Ramp Generator Circuit for CMOS Image Sensor

作　　者：李闯泽 韩本光 何杰[1] 吴龙胜[1] LI Chuangze;HAN Benguang;HE Jie;WU Longsheng(Xi’an Microelectronic Technology Institute,Xi’an 710072,Shaanxi,China;School of Microelectronics,Xidian University,Xi’an 710072,Shaanxi,China)

机构地区：[1]西安微电子技术研究所,陕西西安710072 [2]西安电子科技大学微电子学院,陕西西安710072

出　　处：《武汉大学学报（理学版）》2020年第3期304-314,共11页Journal of Wuhan University:Natural Science Edition

基　　金：国家重大科技产业工程计划(2017ZX01006101-001);陕西省教育厅科学研究计划(19JC029)。

摘　　要：为解决空间辐射环境引起的列并行单斜式模拟数字转换器(analog to digital converter,ADC)中斜坡信号范围不能动态校正的问题,提出一种用于CMOS(complementary metal oxide semiconductor,互补金属氧化物半导体)图像传感器的高精度抗辐射自适应斜坡产生电路设计方法,并对该方法进行了理论分析和验证。仿真实验结果表明:通过dummy像元的设计可以实现输入到输出整个信号环路的闭环自适应负反馈调节;该斜坡产生电路能够在电离总剂量(total ionization dose,TID)效应影响情况下自动调整斜坡信号斜率,从而有效提高斜坡信号的精度。In order to address the issue that the ramp range cannot be dynamically corrected in the column-parallel single-slope analog to digital converter(ADC)caused by space radiation environment,a design method of high precision radiation-hardened adaptive ramp generator circuit for complementary metal oxide semiconductor(CMOS)image sensor is proposed,theoretically an⁃alyzed and verified.The simulation results show that the closed-loop adaptive negative feedback adjustment of the entire signal loop from input to output can be realized by the design of the dummy pixel.And the ramp generator circuit can automatically adjust the slope of the ramp under the influence of the total ionization dose(TID)effect,thereby effectively improving the accuracy of the ramp signal.

关 键 词：CMOS图像传感器 单斜ADC 斜坡发生器 抗辐射 自适应 微分非线性 积分非线性 

分 类 号：TN492[电子电信—微电子学与固体电子学]