Bi掺杂ZnO籽晶层生长纳米ZnO薄膜性能研究  

Study on Properties of Nano ZnO Films Grown by Bi-Doped ZnO Seed Layer

作　　者：侯冰阳 李丽华[1] 王航 黄金亮[1] HOU Bingyang;LI Lihua;WANG Hang;HUANG Jinliang(School of Materials Science and Engineering,Henan University of Science and Technology, Luoyang 471000, China)

机构地区：[1]河南科技大学材料科学与工程学院,河南洛阳471000

出　　处：《压电与声光》2020年第3期348-352,共5页Piezoelectrics & Acoustooptics

基　　金：河南省自然科学基金资助项目(162300410088);河南科技大学高级别科研项目培育基金资助项目(2015GJB005)。

摘　　要：采用溶胶-凝胶法制备得到不同浓度Bi3+掺杂ZnO籽晶层,又进一步采用水热法合成了六方纤锌矿结构的ZnO纳米棒。通过X线衍射(XRD)、场发射扫描电子显微镜(FESEM)、光致发光(PL)谱等测试手段对样品结构、形貌和光学性能进行测试和表征。结果表明,在不同浓度Bi掺杂ZnO籽晶层上生长纳米ZnO薄膜,ZnO的晶体结构没有改变,均为六方纤锌矿结构,且(002)晶面的峰强明显高于其他晶面的峰强值;在FESEM电镜观察下发现,不同掺杂浓度Bi掺杂ZnO籽晶层上水热生长的纳米ZnO薄膜均为纳米棒状。PL光谱显示随着Bi掺杂量增加,样品的近紫外发射峰和晶格缺陷峰等峰值明显增大,且有红移现象产生。其中禁带宽度随着Bi掺杂量的增大而减小,说明Bi3+可以有效地调节ZnO的禁带宽度。The ZnO seed layers with different Bi3+-doping concentrations were prepared by Sol-Gel method,and wurtzite structured ZnO nanorods were synthesized by hydrothermal method.The X-ray diffraction(XRD),Field Emission Scanning Electron Microscopy(FESEM)and photoluminescence(PL)spectrum were used to measure and characterize the structure,morphology and optical properties of the samples.The results show that the nano ZnO films grown on the Bi-doped ZnO seed layer with different concentrations has no change in the crystal structure of ZnO,which is hexagonal wurtzite structure,and the peak intensity of(002)crystal surface is significantly higher than that of other crystal surfaces.It was found by FESEM that the hydrothermal growth of nano ZnO films on the seed layer of Bi-doped ZnO with different doping concentration is in the shape of nanorods.The PL spectrum shows that the peak values of near ultraviolet(UV)emission and lattice defect increase obviously with increase of the amount of the Bi-doping,and the red shift phenomenon occurs.The band gap width decreases with the increase of the amount of Bi-doping,which indicates that Bi3+can effectively adjust the band gap width of ZnO.

关 键 词：Bi^3+掺杂 ZNO纳米棒 溶胶-凝胶法 水热法 光学性质 

分 类 号：TN304.055[电子电信—物理电子学] O482.31[理学—固体物理]