检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
作 者:翟小飞[1] 刘柳 潘启军 吴文力 李配飞 ZHAI Xiao-fei;LIU Liu;PAN Qi-jun;WU Wen-li;LI Pei-fei(National Key Laboratory of Science and Technology on Vessel Integrated Power System, Naval Univ. of Engineering, Wuhan 430033, China;Daqo Group Co. Ltd., Yangzhong 212200, China;Naval Research Academy, Shanghai 200235, China)
机构地区:[1]海军工程大学舰船综合电力技术国防科技重点实验室,武汉430033 [2]大全集团,江苏扬中212200 [3]海军研究院,上海200235
出 处:《海军工程大学学报》2020年第1期1-6,共6页Journal of Naval University of Engineering
基 金:国家自然科学基金资助项目(51077129,51607186,51407190);国家973计划资助项目(2013CB035601)。
摘 要:针对阻感负载模型不能精确反映出吸收电容等缓冲器件对复合母排特性影响的问题,提出了复合母排多端口参数矩阵的建模方法。利用该复合母排多端口电路仿真模型,对并联器件的电流不均度以及吸收电容容值对功率器件过电压性能的影响进行了分析,仿真结果可指导复合母排优化设计及吸收电容的选型。通过对逆变器系统的仿真和试验,对比了中点电流的频谱,验证了复合母排多端口电路仿真模型的有效性。To solve the problem of inaccurate description of effects by such buffers as snubber capacitor and clike on the daracteristics of compound bus-bur,firstly a method for parameter matrix of multiport circuit modeling is proposed.And then,by utilizing the multiport circuit simulation models of the compound bus-bars,the current inequality between parallel devices,the influence on the over-voltage of snubber capacitors are all analyzed by simulations.The simulation results can be used to guide the designs of the compound bus-bars and snubber capacitors.Finally,the contrast of the spectrum of the midpoint current between simulation results and experimental data validates the multiport circuit simulation models of the compound bus-bars.
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:216.73.216.175