Narrow-linewidth thermally tuned multi-channel interference widely tunable semiconductor laser with thermal tuning power below 50 mW  

作　　者：QUANAN CHEN CHUN JIANG KUANKUAN WANG MIAO ZHANG XIANG MA YE LIU QIAOYIN LU WEIHUA GUO 

机构地区：[1]Wuhan National Laboratory for Optoelectronics&School of Optical and Electronic Information,Huazhong University of Science and Technology,Wuhan 430074,China

出　　处：《Photonics Research》2020年第5期671-676,共6页光子学研究（英文版）

基　　金：National Key Research and Development Program of China(2018YFB2201201);China Postdoctoral Science Foundation(2018M642824);National Natural Science Foundation of China(61675077,61904064);State Key Laboratory on Integrated Optoelectronics(IOSKL2018KF13)。

摘　　要：A thermally tuned multi-channel interference widely tunable semiconductor laser is designed and demonstrated,for the first time to our knowledge,that realizes a tuning range of more than 45 nm,side-mode suppression ratios up to 56 d B,and Lorentzian linewidth below 160 k Hz.Al Ga In As multiple quantum wells(MQWs)were used to reduce linewidth,which have a lower linewidth enhancement factor compared with In Ga As P MQWs.To decrease the power consumption of micro-heaters,air gaps were fabricated below the arm phase sections.For a 75μm long suspended thermal tuning waveguide,about 6.3 m W micro-heater tuning power is needed for a 2πround-trip phase change.Total micro-heater tuning power required is less than 50 m W across the whole tuning range,which is lower than that of the reported thermally tuned tunable semiconductor lasers.

关 键 词：tuning TUNABLE POWER 

分 类 号：TN248.4[电子电信—物理电子学]