Effect of interface magnetization depinning on the frequency shift of ferromagnetic and spin wave resonance in YIG/GGG films  被引量:1

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作  者:Fanqing Lin Shouheng Zhang Guoxia Zhao Hongfei Li Weihua Zong Shandong Li 林凡庆;张守珩;赵国霞;李洪飞;宗卫华;李山东(College of Physics,Center for Marine Observation and Communications,Qingdao University,Qingdao 266071,China;School of Electronics and Information,Qingdao University,Qingdao 266071,China)

机构地区:[1]College of Physics,Center for Marine Observation and Communications,Qingdao University,Qingdao 266071,China [2]School of Electronics and Information,Qingdao University,Qingdao 266071,China

出  处:《Chinese Physics B》2020年第6期499-504,共6页中国物理B(英文版)

基  金:National Natural Science Foundation of China(Grant Nos.11674187 and 51871127);Technology on Electronic Test&Measurement Laboratory(Grant No.6142001180103).

摘  要:Nowadays the yttrium iron garnet(Y3Fe5O12, YIG) films are widely used in the microwave and spin wave devices due to their low damping constant and long propagation distance for spin waves. However, the performances, especially the frequency stability, are seriously affected by the relaxation of the interface magnetic moments. In this study, the effect of out-of-plane magnetization depinning on the resonance frequency shift(△ fr) was investigated for 3-μm YIG films grown on Gd3Ga5O12(GGG)(111) substrates by liquid-phase epitaxy. It is revealed that the ferromagnetic resonance(FMR) and spin wave propagation exhibit a very slow relaxation with relaxation time τ even longer than one hour under an out-of-plane external magnetic bias field. The △ fr span of 15.15–24.70 MHz is observed in out-of-plane FMR and forward volume spin waves. Moreover, the △ fr and τ depend on the magnetic field. The △ fr can be attributed to that the magnetic moments break away from the pinning layer at the YIG/GGG interface. The thickness of the pinning layer is estimated to be about9.48 nm to 15.46 nm according to the frequency shifting. These results indicate that △ fr caused by the pinning layer should be addressed in the design of microwave and spin wave devices, especially in the transverse magnetic components.

关 键 词:yttrium iron garnet(YIG) magnetization relaxation ferromagnetic resonance spin waves 

分 类 号:O484.43[理学—固体物理]

 

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