From two-to multi-state vertical spin valves without spacer layer based on Fe3GeTe2 van der Waals homo-junctions  

基于Fe3GeTe2范德华同质结的无间隔层多态垂直自旋阀

作　　者：Ce Hu Dong Zhang Faguang Yan Yucai Li Quanshan Lv Wenkai Zhu Zhongming Wei Kai Chang Kaiyou Wang 胡策;张东;闫法光;李予才;吕全山;朱文凯;魏钟鸣;常凯;王开友(State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;Beijing Academy of Quantum Information Sciences,Beijing 100193,China)

机构地区：[1]State Key Laboratory of Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China [3]Beijing Academy of Quantum Information Sciences,Beijing 100193,China

出　　处：《Science Bulletin》2020年第13期1072-1077,M0003,共7页科学通报（英文版）

基　　金：supported by the National Key R&D Program of China (2017YFA0303400 and 2017YFB0405700);the National Natural Science foundation of China (61774144);Beijing Natural Science Foundation Key Program (Z190007);the Project from Chinese Academy of Sciences (QYZDY-SSW-JSC020, XDPB12, and XDB28000000);K C Wong Education Foundation。

摘　　要：Different than covalently bonded magnetic multilayer systems,high-quality interfaces without dangling bonds in van der Waals(vd W)junctions of two-dimensional(2D)layered magnetic materials offer opportunities to realize novel functionalities.Here,we report the fabrication of multi-state vertical spin valves without spacer layers by using vd W homo-junctions in which exfoliated Fe3GeTe2 nanoflakes act as ferromagnetic electrodes and/or interlayers.We demonstrate the typical behavior of two-state and threestate magnetoresistance for devices with two and three Fe3GeTe2 nanoflakes,respectively.Distinct from traditional spin valves with sandwich structures,our novel homo-junction-based spin-valve structure allows the straightforward realization of multi-state magnetic devices.Our work demonstrates the possibility of extend multi-state,non-volatile spin information to 2 D magnetic homo-junctions,and it emphasizes the utility of vd W interface as a fundamental building block for spintronic devices.不同于共价键合的磁性多层薄膜体系,由二维层状磁性材料构成的范德华结中的无悬挂键高质量范德华界面为实现新的器件功能提供了可能.与广泛应用的传统三明治结构(铁磁金属/非磁性间隔层/铁磁金属)自旋阀不同,本文报道了无间隔层的、基于范德华同质结的多态垂直自旋阀,这里铁磁电极和/或中间层都为机械剥离获得的二维Fe3GeTe2纳米片.通过制备由两片和三片Fe3GeTe2二维纳米片组成的同质结器件,作者分别演示了两态和三态自旋阀磁阻行为.本文提出的基于范德华同质结的全金属自旋阀具有较小的电阻面积和较低的工作电流密度以及垂直两端器件结构.这种新型的简单自旋阀结构将可能实现更多态的磁学存储和逻辑器件.这项工作揭示了基于二维磁性同质结实现多态非易失磁学存储和逻辑的可能性,并强调范德华界面是自旋电子学器件的基本组成部分.

关 键 词：Vertical spin valve MULTI-STATE Without spacer layer Fe3GeTe2 Van der Waals homo-junction 

分 类 号：O641.3[理学—物理化学]