电极结构与空间布置对压接型IGBT器件内部多芯片并联均流的影响(二):实验研究  

Influence of Electrode Structure and Arrangement on Current Sharing Performance Inside a Multi-chip Press-pack IGBT Device(Part Ⅱ): Experiment

作　　者：顾妙松 崔翔 彭程 唐新灵 韩荣刚 李学宝 赵志斌 GU Miaosong;CUI Xiang;PENG Cheng;TANG Xinling;HAN Ronggang;LI Xuebao;ZHAO Zhibin(State Key Laboratory of Alternate Electrical Power System With Renewable Energy Sources(North China Electric Power University),Changping District,Beijing 102206,China;State Grid Smart Grid Research Institute,Changping District,Beijing 102209,China)

机构地区：[1]新能源电力系统国家重点实验室(华北电力大学),北京市昌平区102206 [2]全球能源互联网研究院,北京市昌平区102209

出　　处：《中国电机工程学报》2020年第10期3288-3296,共9页Proceedings of the CSEE

基　　金：国家自然科学基金–国家电网公司联合基金重点项目(U1766219);中央高校基本科研业务费专项资金(JB2018096)。

摘　　要：开展电极结构与空间布置对压接型IGBT器件内部多芯片并联均流影响的实验研究。首先,比较多种IGBT/FRD芯片级并联均流实验电路,进而搭建压接型IGBT/FRD芯片级动态均流特性实验平台,对16枚FRD芯片开展动态均流测试。实验结果证实器件内存在复杂的动态不均流现象,进一步表明:发射极电极圆周化布置时,在对称的外部电磁条件下可以明显优化器件内部的并联均流特性,但当器件连接外部不对称汇流母排后,该设计方案收效甚微,甚至有加剧不均流的风险;发射极电极刻槽方案,对于对称或不对称的外部电磁条件都能对器件内部的动态均流特性加以改善。In this paper, the effects of the electrode structure and spatial arrangement on current sharing in press-pack IGBT devices were studied by experiment. First, multiple types of current sharing test circuits for press-pack IGBTs/FRDs were comparatively analyzed. Furthermore, an experimental platform for dynamic current sharing test of a multi-chip press pack IGBT/FRD device was built. Then the dynamic current sharing tests were carried out on 16 FRD chips. The experimental results confirm the complex dynamic current sharing phenomenon in the device. The results show that the emitter electrode circumferential arrangement can significantly optimize the parallel current sharing characteristics inside the device under symmetrical external electromagnetic conditions, but it is difficult to improve the current balance after the device is connected to an external asymmetric bus bar, with the risk of increasing current imbalance. And the emitter electrode groove schemes can improve the dynamic current sharing balance of the devices both in symmetric or asymmetrical external electromagnetic conditions.

关 键 词：压接型IGBT 压接型FRD 并联均流实验 电极结构 

分 类 号：TN322.8[电子电信—物理电子学]