120 GHz on-chip multi-mode wideband dielectric resonator antennas for THz applications  

作　　者：TENG Yun-long 腾云龙(School of Microelectronics,Tianjin University,Tianjin 300072,China)

机构地区：[1]School of Microelectronics,Tianjin University,Tianjin 300072,China

出　　处：《Optoelectronics Letters》2020年第3期166-170,共5页光电子快报（英文版）

基　　金：the National Natural Science Foundation of China(No.61701339).

摘　　要：This work discusses the design methods of 120 GHz on-chip dual-mode and three-mode dielectric resonator antennas(DRAs)based on a standard CMOS technology.The bandwidths of the DRAs are expanded by merging adjacent modes with similar radiation patterns.The impedance bandwidth of 18.6%with the peak gain of 6 dBi is achieved for the proposed on-chip dual-mode DRA.In addition,the impedance bandwidth of 20.1%with the peak gain of 6.9 dBi is achieved for the proposed three-mode DRA.To the best of authors’knowledge,the on-chip multi-mode DRAs are first proposed.The impedance bandwidth of the proposed three-mode on-chip DRA is wider than the other on-chip DRAs using planar feeding with on-chip ground.The proposed antennas are promising for terahertz applications due to the merits of wide band,high gain and high radiation efficiency.

关 键 词：DIELECTRIC IMPEDANCE expanded 

分 类 号：TN751.2[电子电信—电路与系统] TN820