Experimental investigation of spontaneous emission characteristics of InGaAs-based indium-rich cluster-induced special quantum structure  

作　　者：Ming Zheng Qingnan Yu Hanxu Tai Jianwei Zhang Yongqiang Ning Jian Wu 郑明;于庆南;邰含旭;张建伟;宁永强;吴坚(Department of Applied Physics,Beihang University,Beijing 100191,China;State Key Laboratory of Luminescence and Application,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China)

机构地区：[1]Department of Applied Physics,Beihang University,Beijing 100191,China [2]State Key Laboratory of Luminescence and Application,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China

出　　处：《Chinese Optics Letters》2020年第5期31-35,共5页中国光学快报（英文版）

基　　金：the National Natural Science Foundation of China(Nos.61376067 and 61474118).

摘　　要：The unamplified spontaneous emission(SE) is one of the important physical processes of the light–matter interaction in a diode laser in terms of Einstein’s theory. The recent research on a kind of new indium-rich cluster(IRC) laser structure did not reveal SE characteristics of the IRC structure, as its unusual quantum confined structure made it difficult to acquire correctly the SE spectra through theoretical simulation or previous experimental techniques. Thus, in this Letter, we firstly established a convenient and effective experimental approach to acquire SE spectra of the IRC structure by the measurement of amplified SEs from dual facets of a single edgeemitting chip with little sample processing. With the proposed method, the special SE spectra due to the IRC effect were observed. Then, the SE formation mechanism and characteristics in the IRC structure were analyzed by comparing the experimental data with theoretical SE spectra using a standard In Ga As/Ga As quantum well with similar material composition. This research provides a useful tool to investigate the SE characteristics of any non-standard diode laser structure and is very meaningful to develop a new type of IRC lasers.

关 键 词：semiconductor laser spontaneous emission indium-rich cluster:InGaAs/GaAs strain 

分 类 号：TN248.4[电子电信—物理电子学]