改进的偏向写调度的混合内存缓冲区调度策略  

An Improved Hybrid Memory Buffer Scheduling Strategy with Write Preference

作　　者：刘兵 汪令辉[3] 张锐 崔莹[2] 段峰[2] LIU Bing;WANG Linghui;ZHANG Rui;CUI Ying;DUAN Feng(School of Computer Science and Technology,University of Science and Technology of China,Heifei 230027,China;Department of Information Engineering,Tongling Vocational and Technical College,Tongling Anhui 244061,China;Tongling Nonferrous Metals Group Co.,Tongling Anhui,244000,China)

机构地区：[1]中国科技大学计算机科学与技术学院,安徽合肥230027 [2]铜陵职业技术学院信息工程系,安徽铜陵244061 [3]铜陵有色金属集团公司,安徽铜陵244000

出　　处：《湖南工业大学学报》2020年第4期48-53,共6页Journal of Hunan University of Technology

基　　金：安徽省高校自然科学研究基金资助重点项目(KJ2018A0749,KJ2018A0751)。

摘　　要：提出一种新的相变存储器(PCM)和DRAM混合内存偏向写调度缓冲区页面调度策略(FWLRU)。该策略根据PCM和DRAM在读上区别不大,所以只进行"写"热页调度进入DRAM,而不专门进行"读"热页的调度,同时在PCM和DRAM的页面置换时,不淘汰页面,采取互换的原则,以增加页面的命中率和减少PCM的写。实验结果表明,该策略能有效提高页面的命中率和减少PCM的写。A proposal has been made of a new hybrid memory scheduling strategy(FWLRU)for phase change memory(PCM)and DRAM.Based on the difference between PCM and DRAM in reading,this proposed strategy only performs"write"hot page scheduling to enter DRAM instead of"read"hot page scheduling.Meanwhile,pages will not be eliminated in the page replacement of PCM and DRAM,with the principle of exchange adopted to increase the hit rate of pages and reduce PCM writing.The experimental results show that the strategy can effectively improve the hit rate of pages and reduce PCM writing.

关 键 词：非易失存储器 相变存储 混合内存 缓冲区调度 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]