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作 者:Ming-Chao Yang Lin-Feng Wan Jing-Cheng Wang Zi-Cheng Ma Peng Wang Nan Gao Hong-Dong Li 杨名超;万琳丰;王旌丞;马子程;王鹏;高楠;李红东(State Key Lab of Superhard Materials,College of Physics,Jilin University,Changchun 130012,China)
机构地区:[1]State Key Lab of Superhard Materials,College of Physics,Jilin University,Changchun 130012,China
出 处:《Chinese Physics Letters》2020年第6期66-69,共4页中国物理快报(英文版)
基 金:Supported by the National Natural Science Foundation of China under Grant Nos.51672102 and 51972135。
摘 要:Surface terminations of diamond play an important role in determining the electric properties of diamond-based electronic devices.We report an ultraviolet/ozone(UV/ozone)treatment process on hydrogen-terminated single crystal diamond(H-diamond)to modulate the carrier behavior related to varying oxygen adsorption on surfaces.By UV/ozone treatments,the induced oxygen radicals are chemically adsorbed on the H-terminated diamond and replace the original adsorbed H,which is analyzed by x-ray photoelectron spectroscopy.The concentration of oxygen adsorbed on surface increases from^3%to^8%with increasing the ozone treatment time from 20 s to 600 s.It is further confirmed by examining the wettability properties of the varying diamond surfaces,where the hydrophobic for H-termination transfers to hydrophilic for partly O-termination.Hall effect measurements show that the resistance(hole mobility)of the UV/ozone-treated H-diamond continuously increases(decrease)by two orders of magnitude with increasing UV/ozone treatment time from 20 s to 600 s.The results reveal that UV/ozone treatment becomes an efficient method to modulate the surface electrical properties of H-diamonds for further investigating the oxygenation effect on two-dimensional hole gas based diamond devices applied in some extreme environments.
关 键 词:OZONE TERMINATION terminated
分 类 号:TQ163[化学工程—高温制品工业]
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