Effect of a Single Threading Dislocation on Electrical and Single Photon Detection Characteristics of 4H-SiC Ultraviolet Avalanche Photodiodes  

作　　者：Lin-Lin Su Dong Zhou Qing Liu Fang-Fang Ren Dun-Jun Chen Rong Zhang You-Dou Zheng Hai Lu 苏琳琳;周东;刘清;任芳芳;陈敦军;张荣;郑有炓;陆海(School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,China)

机构地区：[1]School of Electronic Science and Engineering,Nanjing University,Nanjing 210023,China

出　　处：《Chinese Physics Letters》2020年第6期119-122,共4页中国物理快报（英文版）

基　　金：Supported by the National Key R&D Program of China under Grant No.2016YFB0400902;the National Natural Science Foundation of China under Grant No.61921005;the Natural Science Foundation of Jiangsu Province under Grant No.BK20190302。

摘　　要：We fabricated 4H-SiC ultraviolet avalanche photodiode(APD)arrays and systematically investigated the effect of threading dislocations on electrical and single photon detection characteristics of 4H-SiC APDs.Based on a statistical correlation study of individual device performance and structural defect mapping revealed by molten KOH etching,it is determined with high confidence level that even a single threading dislocation within APD active region would lead to apparent device performance degradation,including increase of dark current near breakdown voltage,premature breakdown and reduction of single photon detection efficiency at fixed dark count rate.

关 键 词：BREAKDOWN ULTRAVIOLET APPARENT 

分 类 号：TN312.7[电子电信—物理电子学]