双层异质结碲镉汞甚长波红外焦平面探测器研究进展  

Research Progress of HgCdTe VLWIR Focal Plane Detectors Based on Double-Layer Heterojunction

作　　者：谭振[1] 刘世光 田震[1] 宋淑芳[1] 吴卿[1] 周立庆[1] TAN Zhen;LIU Shi-guang;TIAN Zhen;SONG Shu-fang;WU Qing;ZHOU Li-qing(North China Research Institute of Electro-Optics, Beijing 100015, China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《红外》2020年第4期1-7,共7页Infrared

摘　　要：报道了碲镉汞甚长波红外焦平面探测器的最新研究进展。采用水平液相外延In掺杂和垂直液相外延As掺杂技术生长了p--on--n异质结材料。基于湿法腐蚀、表侧壁钝化以及In柱互连工艺,制备了第一支台面型碲镉汞甚长波红外焦平面器件。在60 K的工作温度下,该器件的截止波长为14.28μm,有效像元率为94.5%,平均峰值探测率为8.98×10^10 cm·Hz^1/2·W^-1。The latest research progress of HgCdTe very-long-wavelength infrared focal plane detectors in North China Research Institute of Electro-Optics is reported.The p--on--n heterojunction materials are grown using horizontal liquid phase epitaxy with In doping and vertical liquid phase epitaxy with As doping.Based on wet etching,surface and side passivation,and In bump interconnection process,the first mesa-type HgCdTe very-long-wavelength infrared focal plane device is prepared.At an operating temperature of 60 K,the device has a cut-off wavelength of 14.28 m,an operability of 94.5%,and an average peak detection rate of 8.98×10^10 cm·Hz^1/2·W^-1.

关 键 词：双层异质结 甚长波红外 碲镉汞 红外焦平面探测器 

分 类 号：TN213[电子电信—物理电子学]