砷化镓射频前端LNA设计  

Design of GaAs RF front-end LNA

作　　者：董震震 甘业兵[2,3] 罗彦彬 DONG Zhen-zhen;GAN Yebing;LUO Yan-bin(University of Chinese Academy of Sciences,Bejing 101408,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Hangzhou Zhongke Microelectronics Co.,Ltd.,Hangzhou 310053,China)

机构地区：[1]中国科学院大学,北京101408 [2]中国科学院微电子研究所,北京100029 [3]杭州中科微电子有限公司,浙江杭州310053

出　　处：《微电子学与计算机》2020年第7期16-20,共5页Microelectronics & Computer

摘　　要：基于砷化镓0.25μm工艺的pHEMT器件,设计了一种具有高线性度、高增益、极低噪声性能的宽带低噪声放大器(LNA).电路为共源共栅结构,并采用级间匹配以达到提高高频增益延展带宽的效果.本设计分为0.7~1.0GHz.1.6~2.2GHz与2.3~2.7 GHz三个频段进行外部匹配,电源电压为5 V,测试结果显示,该低噪声放大器静态工作电流为75 mA,在三个频段分别获得27.2~25.8 dB.22~20 dB、19.2~18.7 dB的高增益,并且每个频段内都有较好的增益平坦度,具有0.45~0.75 dB极低的噪声系数和20~19.5 dBm的输出1 dB压缩点.A wideband low noise amplifier with high-linearity,high-gain and ultra-low noise is designed and fabricated in a 0.25μm GaAs pHEMT process.A matching network is used between common-gate and common-source transistors in this circuit to obtain larger power gain in higher bands.The measurement results show that the quiescent current of the LNA was 75 mA in 5 V power supply.After external matching in three bands of 0.7~1.0 GHz,1.6~2.2 GHz and 2.3~2.7 GHz,the LNA respectively provide a high and flat gain of 27.2~25.8 dB,22~20 dB and 19.2~18.7 dB,a low noise figure of 0.45~0.75 dB and an OP1dB of 20~19.5 dBm.

关 键 词：低噪声放大器 砷化镓 级间匹配 宽带 

分 类 号：TN432[电子电信—微电子学与固体电子学]