La^3+掺杂对Pb(Lu1/2Nb1/2)O3反铁电单晶储能性能的影响  

Effect of La^3+Doping on Energy Storage Performance of Pb(Lu1/2Nb1/2)O3 Antiferroelectric Single Crystal

作　　者：杨晓明 刘颖[1] 王祖建[1,2] 苏榕冰 何超[1,2] 龙西法 YANG Xiaoming;LIU Ying;WANG Zujian;SU Rongbing;HE Chao;LONG Xifa(Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China;Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China)

机构地区：[1]中国科学院福建物质结构研究所,福州350002 [2]中国福建光电信息科学与技术创新实验室,福州350108

出　　处：《人工晶体学报》2020年第6期1016-1022,共7页Journal of Synthetic Crystals

基　　金：国家自然科学基金(51902307);福建省工业引导性项目(2018H0044,2019H0052)。

摘　　要：采用顶部籽晶法生长了La3+掺杂Pb(Lu1/2Nb1/2)O3(PLN)反铁电单晶,晶体组分简写为xLa-PLN(x=1%、3%、5%),并详细研究了La3+掺杂对PLN晶体储能性能的影响。通过ICP测试了不同配比晶体的实际掺杂比例,分别为0.3%、1.1%、2.9%。XRD显示该晶体体系为正交相钙钛矿结构,且存在两套超晶格衍射点阵,分别由A位铅离子反平行排列和B位离子有序排列导致。介电温谱给出了晶体的介电常数、介电损耗随温度和频率的变化规律,不存在弥散相变。变温电滞回线显示,该体系均表现出典型的双电滞回线特性,且随着La3+含量的增加,有效储能密度逐渐增大,最高储能密度达到5.1 J/cm3。这主要是由于La3+掺杂导致体系的容忍因子下降,从而增强了反铁电稳定性,最终提高了PLN体系的能量存储密度。Effect of La3+-doping on energy storage performance of Pb(Lu1/2Nb1/2)O3 antiferroelectric(AFE)single crystals(abbreviated as xLa-PLN,x=1%,3%,5%)was studied,which is abtained by the top-seed growth method.The actual components of these crystals were 0.3%,1.1%and 2.9%by ICP test,respectively.The crystal structure is found to be perovskite orthorhombic in nature based on the XRD analysis.In addition,two superlattice reflections are identified,which stem from the antiparallel displacements of the Pb2+and the ordered B-site ions.The dielectric spectrum shows the variation of dielectric constant,dielectric loss as a function of temperature and frequencies,and there is no diffuse phase transition.This system shows the typical double hysteresis loops and the energy storage density gradually increases with increasing La3+content,which can reach to 5.1 J/cm3.This is mainly because La3+-doping leads to a decrease in the tolerance factor,which enhances the stability of antiferroelectric,eventually increasing the energy density of this system.

关 键 词：Pb(Lu1/2Nb1/2)O3 反铁电晶体 顶部籽晶法 能量存储密度 

分 类 号：O738[理学—晶体学]