一种皮瓦级超低功耗基准电压源  

A Picowatt Ultra-Low Power Consumption Voltage Reference

作　　者：王彦淇 王耀[1] 全智 WANG Yanqi;WANG Yao;QUAN Zhi(School of Information Engineering,Zhengzhou University,Zhengzhou 450001,P.R.China)

机构地区：[1]郑州大学信息工程学院,郑州450001

出　　处：《微电子学》2020年第3期326-330,共5页Microelectronics

基　　金：国家自然科学基金青年资助项目(61704022);国家自然科学基金资助项目(U1604160);河南省科技攻关项目(192102210086);郑州大学青年教师专项科研启动基金资助项目(32210904)。

摘　　要：提出一种皮瓦级、超低功耗的新型基准电压源。该电路利用工作在亚阈值区的不同类型MOS管的栅源电压差,获得在不同工艺角下均有良好温度特性的基准电压。同时,加入校准电路来减小工艺偏差对基准电压的影响。采用0.18μm CMOS工艺,对电路进行设计和仿真。仿真结果表明,该基准电压源的工作电压范围为0.6~2 V,线性灵敏度为0.13%/V;在TT工艺角、0.6 V电源电压下,电路典型功耗为130 pW;在-40℃~110℃范围内,校准后,温度系数范围为2.04×10^-5/℃~9.38×10^-5/℃。该电路适用于射频识别、无线传感器、医用植入式芯片等超低功耗片上系统中。A new type of voltage reference structure with ultra-low power consumption at the level of pW was proposed.To obtain a reference voltage with good temperature characteristics at different process corners,the gate-to-source voltage difference of different types of MOSFETs was used by the proposed circuit,which was operated in the subthreshold region.By using the trimming circuit,the influence of the process deviation could be reduced.The circuit was designed and simulated in a 0.18μm CMOS technology.The simulation results showed that the linear sensitivity of the voltage reference was 0.13%/V in a supply voltage rage of 0.6~2 V.At the conditions of TT process corner and supply voltage of 0.6 V,the power consumption was 130 pW.After trimming,the temperature coefficient ranged from 2.04×10^-5/℃to 9.38×10^-5/℃within the range of-40°C to 110°C.The circuit could be used in an ultra-low power system on chip such as radio frequency identifier,wireless sensor,medical implant chip and so on.

关 键 词：CMOS 低功耗 低电压 射频识别 无线传感器 

分 类 号：TN432[电子电信—微电子学与固体电子学]