MxZn3-0.5x(PO4)2(M=Na,K)长余辉发光材料的发光性能和机理探讨  

Phosphorescence Behavior and Photoluminescence Mechanism of MxZn3-0.5x(PO4)2(M=Na,K)Phosphor

作　　者：谢婷 马喜宁 王永鹏 周红丽[1] XIE Ting;MA Xining;WANG Yongpeng;ZHOU Hongli(School of Science and Chemical Engineering,Ningxia Institute of Science and Technology,Shizuishan Ningxia 753000)

机构地区：[1]宁夏理工学院理学与化学工程学院,宁夏石嘴山753000

出　　处：《河南科技》2020年第16期118-123,共6页Henan Science and Technology

基　　金：宁夏高等学校科学研究项目(NGY2017209)。

摘　　要：采用高温固相法制备以缺陷为发光中心的淡蓝绿色长余辉发光材料MxZn3-0.5x(PO4)2(M=Na,K)。XRD分析结果表明,MxZn3-0.5x(PO4)2的主要衍射峰与α-Zn3(PO4)2的值相吻合。Na0.08Zn2.96(PO4)2激发峰位于332 nm处,发射峰在420~550 nm,最大值位于460 nm处,目测余辉时间达4 h。通过热释光曲线表征分析陷阱数量并计算了陷阱深度,分析表明,Na+掺杂可以增强Zn3(PO4)2在低温处的氧空位缺陷浓度,改善材料的陷阱深度,从而使材料发光。MxZn3-0.5x(PO4)2(M=Na,K),a light blue-green long afterglow material,was prepared by high temperature sol⁃id-state method.The XRD results show that the main diffraction peaks of MxZn3-0.5x(PO4)2 phosphors were consistent with the values ofα-Zn3(PO4)2 crystal.Na0.08Zn2.96(PO4)2 had a broad emission band from 420 nm to 550 nm,centered at about 460 nm.The best long-lasting phosphorescence was observed with naked eyes in the dark for 4 h.By the characteristic of TL measurement,the number and the depth of trap level were analyzed.The doping of Na+could in⁃crease the number of oxygen vacanics at low temperature and increase the trap depth,resulting in good luminescence.

关 键 词：长余辉发光材料 掺杂 Zn3(PO4)2 发光机理 

分 类 号：TB321[一般工业技术—材料科学与工程]