0~3.5 T直流背景磁场下第二代高温超导带材临界电流各向异性测试与分析  被引量:5

Test and analysis of critical current anisotropy of second generation superconducting tape under 0~3.5 T DC background magnetic field

在线阅读下载全文

作  者:张妍 诸嘉慧 陈盼盼 王海洋 秦汉阳 戴银明王晖 刘辉 方进[1] ZHANG Yan;ZHU Jia-hui;CHEN Pan-pan;WANG Hai-yang;QIN Han-yang;DAI Yin-ming;WANG Hui;LIU Hui;FANG Jin(School of Electrical Engineering,Beijing Jiaotong University,Beijing 100044,China;China Electric Power Research Institute,Beijing 100192,China;School of Electrical and Control Engineering,North China University of Technology,Beijing 100144,China;Institute of Electrical Engineering,Chinese Academy of Sciences,Beijing 100190,China)

机构地区:[1]北京交通大学电气工程学院,北京100044 [2]中国电力科学研究院有限公司,北京100192 [3]北方工业大学电气工程与控制学院,北京100144 [4]中国科学院电工研究所,北京100190

出  处:《电工电能新技术》2020年第7期24-29,共6页Advanced Technology of Electrical Engineering and Energy

基  金:预研领域基金项目(6140721020406)。

摘  要:为掌握第二代(2G)高温超导(HTS)带材在0~3. 5 T直流背景磁场下的临界电流(Ic)和n值变化趋势,构造和应用了一种新型分裂背场磁体系统,通过测试分析获得了背景磁场对Ic和n值的影响规律。采用4. 2 K运行温度、两个同轴分裂的NbTi线圈构成的超导磁体和样品保持器来改变背景磁场的大小和角度(0~3. 5 T、0~90°),2G HTS带材置于液氮环境(77 K),设置电流源上升速率为1 A/s,基于四引线法原理与直流失超判据(1μV/cm)获得2G HTS带材在高直流背景磁场下的Ic和n值,实验结果表明,2G HTS带材的Ic和n值变化趋势一致,均随外界磁场强度B和带材表面与磁场夹角θ的增大而退化,在背景磁场为1. 4 T时,2G HTS带材在垂直场下的临界电流衰减了84. 6%,是平行场下临界电流衰减程度的1. 47倍。In order to master the trend of critical current(I c)and value n of second generation(2G)high temperature superconducting(HTS)tape under 0~3.5 T DC background magnetic field,a new type of split back field magnet system was constructed and utilized.The law of influence of the background magnetic field on I c and value n was obtained by test analysis.Superconducting magnets and sample holders with 4.2 K operating temperature and two coaxially split NbTi coils are used to change the magnitude and angle of the background magnetic field(0~3.5 T,0~90°).2G HTS tape was placed in a liquid nitrogen environment(77 K),and the current source rise rate was set to 1 A/s.Based on the four-lead method principle and the criterion of loss of DC superconductance(1μV/cm),I c and n of the 2G HTS tape under DC background magnetic field were obtained.The experimental results show that the I c and n values of 2G HTS tape show the same trend,which are degraded with the external magnetic field strength B and the increase of the angleθbetween the tape surface and the magnetic field.When the background magnetic field is 1.4 T,the 2G HTS tape is vertical,I c under the field is attenuated by 84.6%,which is 1.47 times the degree of parallel field critical current attenuation.

关 键 词:分裂背场磁体 临界电流 n值 高温超导带材 NBTI 

分 类 号:TM26[一般工业技术—材料科学与工程]

 

参考文献:

正在载入数据...

 

二级参考文献:

正在载入数据...

 

耦合文献:

正在载入数据...

 

引证文献:

正在载入数据...

 

二级引证文献:

正在载入数据...

 

同被引文献:

正在载入数据...

 

相关期刊文献:

正在载入数据...

相关的主题
相关的作者对象
相关的机构对象