Z型BiVO4/GO/g-C3N4复合材料的制备及其可见光下催化性能  被引量:5

Fabrication of Z-scheme BiVO4/GO/g-C3N4 Photocatalyst with Efficient Visble-light Photocatalytic Performance

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作  者:许世超[1] 朱天哲 乔阳 白学健 唐楠 郑春明[2] XU Shichao;ZHU Tianzhe;QIAO Yang;BAI Xuejian;TANG Nan;ZHENG Chunming(School of Environmental Science and Engineering,Tiangong University,Tianjin 300389,China;School of Chemistry and Chemical Engineering,Tiangong University,Tianjin 300389,China)

机构地区:[1]天津工业大学环境科学与工程学院,天津300389 [2]天津工业大学化学化工学院,天津300389

出  处:《无机材料学报》2020年第7期839-846,共8页Journal of Inorganic Materials

基  金:National Natural Science Foundation of China(51772208,51678409);Natural Science Foundation of Tianjin(17JCYBJC15900)。

摘  要:Z-型光催化剂可以有效增强电荷分离,从而改善光催化剂的活性。采用浸渍–煅烧和水热法两步制备Z型BiVO4/GO/g-C3N4光催化剂,并用不同手段对其进行表征。在BiVO4/GO/g-C3N4的光催化过程中,GO纳米片作为BiVO4和g-C3N4之间的快速传输通道,可以抑制电子–空穴复合,显著促进电荷分离,提高三元异质结的氧化还原能力。与单组分或二元复合物相比,该催化剂具有良好的光降解罗丹明B(RhB)的能力。在可见光照射下,它能够在120 min内降解85%RhB,空穴(h+)在反应中起主要作用。该工作为三元光催化剂体系提供了简单的制备方法,其中g-C3N4通过GO与BiVO4偶联,光催化活性显著提高。Fabricating Z-scheme photocatalysts is a promising method for improving photocatalytic activity by effectively enhancing charge separation.A new Z-scheme BiVO4/GO/g-C3N4 photocatalyst was prepared by two steps of impregnation-calcination and hydrothermal method,and then characterized by different methods.In the photocatalytic process of BiVO4/GO/g-C3N4,GO nanosheet act as fast transmission channels between BiVO4 and g-C3N4 and can suppress electron-hole recombination,which significantly promotes the charge separation and improves the redox ability of the ternary heterojunction.The ternary photocatalyst has good photocatalytic degradation of Rhodamine B(RhB)as compared to the single-component or binary composite.It is capable of degrading 85%of RhB in 120 min under visible light irradiation and the hole(h+)plays a major role in the reaction.This work provides a simple preparation method for a ternary photocatalyst system in which g-C3N4 coupled with BiVO4 by GO to significantly improve photocatalytic activity.

关 键 词:BIVO4 g-C3N4 GO 三元催化剂 Z型异质结 

分 类 号:TB34[一般工业技术—材料科学与工程]

 

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