低温制备ZnO压敏陶瓷及其电性能研究  

Low Temperature Preparation and Electrical Properties of ZnO Varistor Ceramics

作　　者：周波 鲁加加 吴龙 马雪[1] 李良锋[1] ZHOU Bo;LU Jiajia;WU Long;MA Xue;LI Liangfeng(School of Materials Science and Engineering,Southwest University of Science and Technology,Mianyang 621010,China;Qingdao Product Quality Supervision and Testing Research Center,Qingdao 266101,China)

机构地区：[1]西南科技大学材料科学与工程学院,绵阳621010 [2]青岛市产品质量监督检验研究院,青岛266101

出　　处：《玻璃》2020年第7期16-20,共5页Glass

摘　　要：ZnO压敏陶瓷作为电压保护以及抗浪涌设备中电子元器件的核心材料,其高非线性系数,高通流容量,强浪涌吸收能力等性能研究以及低温烧结制备技术受到广泛关注。通过掺杂烧结助剂BST(Bi2 O3∶SiO2∶TiO2摩尔比为6∶4∶3),于875℃烧结制备了性能优异的ZnO压敏陶瓷。主要探究了烧结助剂的掺量对ZnO压敏陶瓷的物相组成、微观结构、体积密度以及压敏性能的影响。结果表明:BST掺杂会导致晶粒细化,有效地提高样品的致密度及压敏性能。当BST掺量摩尔分数为0.25%时,获得样品的综合性能最佳,体积密度为5.63 g/cm3,相对密度为97.4%,非线性系数最大为38.9,电压梯度为最小值301.2 V/mm,漏电流密度为最小值0.028 A/mcm2。As the core material of electronic components in voltage protection and anti-surge equipment, ZnO varistor ceramic has attracted wide attention due to its high nonlinear coefficient, high current capacity, strong surge absorption capacity and other low-temperature sintering preparation technologies. ZnO varistor ceramics with excellent properties were prepared by doping sintering aid BST the molar ratio of Bi2 O3-SiO2-T iO2 is 6∶4∶3 at 875 °C. The effects of the content of sintering aids on the phase composition, microstructure, density, and electrical properties of ZnO varistor ceramics were mainly investigated. The results show that BST doping will lead to grain refinement, which can effectively increase the density and electrical properties of the sample. When the BST content is 0.25 mol%, the comprehensive performance of the obtained sample is the best. The bulk density is 5.63 g/cm3, relative density is 97.4%, the minimum voltage gradient is 301.2 V/mm, and the leakage current density is 0.028 μA/cm2.

关 键 词：ZNO压敏陶瓷 低温烧结 压敏性能 非线性系数 

分 类 号：TQ174[化学工程—陶瓷工业]