Revealing the surface electronic structures of AIGaN deep-ultraviolet multiple quantum wells with lateral polarity domains  

作　　者：WEI GUO LI CHEN HOUQIANG XU YINGDA QIAN MOHEB SHEIKHI JASON HOO SHIPING GUO LIANG XU JIANZHE LU FERAS ALQATARI XIAOHANG LI KAIYAN HE ZHE CHUAN FENG JICHUN YE 

机构地区：[1]Ningbo Institute of Materials Technology and Engineering,Chinese Academy of Sciences,Ningbo 315201,China [2]University of Chinese Academy of Sciences,Beijing 100049,China [3]College of Physics Science&Technology,Laboratory of Optoelectronic Materials and Detection Technology,Guangxi Key Laboratory for the Relativistic Astrophysics,Guangxi University,Nanning 530004,China [4]Advanced Micro-Fabrication Equipment Inc.,Shanghai 201201,China [5]Zhe Jiang Bright Semiconductor Technology Co.,Ltd.,Jinhua 321026,China [6]Advanced Semiconductor Laboratory,King Abdullah University of Science and Technology(KAUST),Thuwal 23955,Saudi Arabia

出　　处：《Photonics Research》2020年第6期812-818,共7页光子学研究（英文版）

基　　金：National Key Research;and Development Program of China(2016YFB0400802);National Natural Science Foundation of China(61704176,61974149);Key Research and Development Program of Zhejiang Province(2019C01080,2020C01145);Ningbo Innovation 2025 Major Project(2018B10088,2019B10121).

摘　　要：We report on the carrier dynamic and electronic structure investigations on AlGaN-based deep-ultraviolet multiple quantum wells (MQWs)with lateral polarity domains.The localized potential maximum is predicted near the domain boundaries by first-principle calculation,suggesting carrier localization and efficient radiative recombination.More importantly,lateral band diagrams of the MQWs are proposed based on electron affinities and valance band levels calculated from ultraviolet(UV)photoelectron spectroscopy.The proposed lateral band diagram is further demonstrated by surface potential distribution collected by Kelvin probe microscopy and the density-of-state calculation of energy bands.This work illustrates that lateral polarity structures are playing essential roles in the electronic properties of II nitride photonic devices and may provide novel perspective in the realization of high-efficiency UV emitters.

关 键 词：ULTRAVIOLET electronic QUANTUM 

分 类 号：O469[理学—凝聚态物理]