Horizontal GeSn/Ge multi-quantum-well ridge waveguide LEDs on silicon substrates  

作　　者：LINZHI PENG Xu LI ZHI LIU XIANGQUAN LIU JUN ZHENG CHUNLAI XUE YUHUA ZUO BUWEN CHENG 

机构地区：[1]State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beiing 100049,China [3]Beijing Academy of Quantum Information Sciences,Bejing 100193,China

出　　处：《Photonics Research》2020年第6期899-903,共5页光子学研究（英文版）

基　　金：National Key Research and Development Program(2018YFB2200103,2018YFB2200501);National Natural Science Foundation of China(61674140,61675195,61774143,61975196);Key Research Program of Frontier Sciences(QYZDY-SSW-JSC022).

摘　　要：A horizontal p-i-n ridge waveguide emitter on a slion(100)substrate with a Gen,g1Sno.c9/Ge multi quantum-well(MQW)active layer was fabricated by molecular beam epitaxy.The device structure was designed to reduce light absorption of metal electrodes and improve injection efficiency.Electroluminescence(EL)at a wavelength of 2160 nm was observed at room temperature.Theoretical calculations indicate that the emission peak corresponds well to the direct bandgap transition(nr-mHr).The light output power was about 2.0μW with an injection current density of 200 kA/cm^2.These results show that the horizontal GeSn/Ge MQW ridge waveguide emiters have great pros-pects for group-IV light sources.

关 键 词：WAVEGUIDE temperature. GeSn 

分 类 号：TN312.8[电子电信—物理电子学]