Self-Assembled Al Nanostructure/ZnO Quantum Dot Heterostructures for High Responsivity and Fast UV Photodetector  

作　　者：Sisi Liu Ming‑Yu Li Jianbing Zhang Dong Su Zhen Huang Sundar Kunwar Jihoon Lee 

机构地区：[1]School of Optical and Electronic Information,Huazhong University of Science and Technology,Wuhan 430074,People’s Republic of China [2]School of Science,Wuhan University of Technology,Wuhan 430070,People’s Republic of China [3]Wuhan National Laboratory for Optoelectronics(WNLO)and School of Engineering Sciences,Huazhong University of Science and Technology,Wuhan 430074,People’s Republic of China [4]College of Electonics and Information,Kwangwoon University,Nowon-gu,Seoul 01897,Republic of Korea [5]Institute of Nanoscale Science and Engineering,University of Arkansas,Fayetteville,AR 72701,USA

出　　处：《Nano-Micro Letters》2020年第9期96-108,共13页纳微快报（英文版）

基　　金：the National Natural Science Foundation of China(Grant Nos.61705070 and 61974052);China Postdoctoral Science Foundation(Grant Nos.2019M662594);National Research Foundation of Korea(NRF)Grant funded by the Korean Government(MSIP)(Nos.NRF2019R1A2C4069438 and NRF2018R1A6A1A03025242)。

摘　　要：Light confinement induced by spontaneous near-surface resonance is inherently determined by the location and geometry of metallic nanostructures(NSs),offering a facile and effective approach to break through the limitation of the light-mater interaction within the photoactive layers.Here,we demonstrate high-performance Al NS/ZnO quantum dots(Al/ZnO) heterostructure UV photodetectors with controllable morphologies of the self-assembled Al NSs.The Al/ZnO heterostructures exhibit a superior light utilization than the ZnO/Al heterostructures,and a strong morphological dependence of the Al NSs on the optical properties of the heterostructures.The inter-diffusion of Al atoms into ZnO matrixes is of a great benefit for the carrier transportation.Consequently,the optimal photocurrent of the Al/ZnO heterostructure photodetectors is significantly increased by 275 times to ~1.065 mA compared to that of the pristine ZnO device,and an outstanding photoresponsivity of 11.98 A W-1 is correspondingly achieved under 6.9 MW cm-2 UV light illumination at 10 V bias.In addition,a relatively fast response is similarly witnessed with the Al/ZnO devices,paving a path to fabricate the high-performance UV photodetectors for applications.

关 键 词：Al/ZnO heterostructure photodetectors Plasmonic enhancement ZnO quantum dots Self-assembled Al nanostructures 

分 类 号：TN36[电子电信—物理电子学] TB383.1[一般工业技术—材料科学与工程]