Mo/Si原子高能量沉积中反射和再溅射的研究  

Reflection and Resputtering of Mo/Si Atoms During High-Energy Deposition

作　　者：孙诗壮 金春水[1] 喻波[1] 郭涛 姚舜[1] 李春[1] 邓文渊[1] Shizhuang Sun;Chunshui Jin;Bo Yu;Tao Guo;Shun Yao;Chun Li;Wenyuan Deng(Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun,Jilin 130033,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院长春光学精密机械与物理研究所,吉林长春130033 [2]中国科学院大学,北京100049

出　　处：《光学学报》2020年第11期40-47,共8页Acta Optica Sinica

基　　金：国家自然科学基金(61605201,21603211)。

摘　　要：使用分子动力学方法计算了Mo、Si原子发生反射和再溅射的概率,以及原子的反射、再溅射角度和能量分布。考虑了四种碰撞:Mo原子与Mo基底碰撞、Mo原子与Si基底碰撞、Si原子与Si基底碰撞、Si原子与Mo基底碰撞。模拟发现,当沉积原子传递给基底的能量降低时,发生反射的概率增加,但是发生再溅射的概率降低。此外,入射角度对反射概率、再溅射概率的影响与沉积原子和基底原子的种类有关;然而,入射能量越高越容易发生反射、再溅射。最后,进行了磁控溅射实验,在具有不同倾斜角度的基底上制备了Mo/Si多层膜样片,实验结论验证了仿真结果。研究结果可以用于模拟磁控溅射镀膜过程,优化镀膜工艺。With molecular dynamics simulations,we calculate the probability as well as the angle and energy distributions when the reflection and resputtering of Mo/Si atoms occur.Four types of collisions are considered:Mo-on-Mo,Mo-on-Si,Si-on-Mo,and Si-on-Si.We find that the lower the amount of energy transferred to the substrate is,the more likely it is for reflection to occur,but the less likely for resputtering.Moreover,the effect of incident angle on the reflection and resputtering probabilities is related to the types of sputtered atoms and substrate atoms.However,the higher the incident energy is,the higher the reflection and resputtering probabilities are.Finally,by the magnetron sputtering experiment,we fabricate the Mo/So multilayer samples on substrates with different inclination angles,and the experimental result verifies the simulation result.This study should be helpful in simulation of magnetron sputtering deposition and the optimization of deposition process.

关 键 词：原子与分子物理学 分子动力学 反射 再溅射 Mo/Si原子 角度分布 能量分布 

分 类 号：O562.5[理学—原子与分子物理]