Si基埋置型GaAs芯片封装技术及其热分析  

Si-Based Embedded GaAs Chip Packaging Technology and Its Thermal Analysis

作　　者：赵敏 周健[2] 孙浩[2] 伍滨和 ZHAO Min;ZHOU Jian;SUN Hao;WU Binhe(College of Science,Donghua University,Shanghai 201620,China;Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China)

机构地区：[1]东华大学理学院,上海201620 [2]中国科学院上海微系统与信息技术研究所,上海200050

出　　处：《电子器件》2020年第3期477-481,共5页Chinese Journal of Electron Devices

基　　金：中科院联合基金项目(6141A01100101)。

摘　　要：传统贴置型芯片封装集成度低、散热效果差,为提高GaAs芯片的封装集成度与散热效果,基于MEMS异质集成技术提出一种毫米波硅埋置型三维封装模型结构,借助COMSOL软件开展热学仿真优化,得到芯片温度与封装基板厚度、底座厚度、涂覆银浆厚度、硅通孔(TSV)距离芯片中心位置及个数的变化规律,获得芯片埋置的热学最优化工艺参数。最终确定的模型集成度高、体积小、散热效果好,封装体积仅为20 mm×10 mm×1 mm,可以实现三维堆叠,芯片工作温度要比传统贴片封装模型降低13.64℃,符合芯片正常工作的温度需求。In order to improve the packaging integration and heat dissipation of GaAs chips,a millimeter-wave silicon embedded three-dimensional packaging model structure based on MEMS heterogeneous integration technology was proposed. The thermal simulation optimization was carried out by COMSOL software. The relationships of the chip temperature with the thickness of the Si substrate,the base and the silver paste were obtained. The thermal optimization process parameters of chip embedding were obtained by changing the distance from the center of the chip and the number of TSV. The finally optimized model has high integration,small size and good heat dissipation effect. The package volume is only 20 mm×10 mm×1 mm,which can realize three-dimensional stacking. The chip working temperature is 13.64 ℃ lower than that of the traditional chip packaging model,which meets the requirements of the normal working temperature of the chip.

关 键 词：封装散热 GaAs芯片 Si基埋置型 TSV通孔 热学仿真 

分 类 号：TN305.94[电子电信—物理电子学] TN43