Investigation on the Trap Signature in Organic Semiconductor Turmeric Film Through Current-Voltage Analysis  

作　　者：Kushal Chakraborty Aloke Kumar Das Ratan Mandal Dulal Krishna Mandal 

机构地区：[1]Department of Physics,Jadavpur University,Kolkata 700032,India [2]School of Energy Studies,Jadavpur University,Kolkata 700032,India [3]Department of Mechanical Engineering,Jadavpur University,Kolkata 700032,India

出　　处：《Transactions of Tianjin University》2020年第4期265-272,共8页天津大学学报（英文版）

摘　　要：The analytical description of the trap signature in the charge conduction process of turmeric dye-based organic semiconductor has been presented in this study.An analytical explanation of the built-in potential Ⅴx-Ⅴ graph that emphasizes the presence of trapping states has been provided.Differential analysis of current-voltage(Ⅰ-Ⅴ)characteristics has also been conducted to verify the trap signature of the carrier in the device.The non-monotonous decrement of the G(Ⅴ)-Ⅴ plot verifies the trap signature.The values of trap energy(Et)and trap factor(θ)have been derived from the logarithmic Ⅰ-Ⅴ relationship.From the analysis of the semilogarithmic Ⅰ-Ⅴ plot,the barrier height(ϕbi)of the device has also been determined.The overallⅠ-Ⅴcurve has been taken into account to examine the Richardson-Schottky and Poole-Frenkel effects on the trap-assisted charge conduction process.From the results of the experiment,the Schottky effect has been observed to be effective,which leads to a bulk-limited charge conduction process.

关 键 词：Organic semiconductor Trap energy Trap factor Turmeric Schottky effect 

分 类 号：TB383.2[一般工业技术—材料科学与工程]