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作 者:薛裕婷 石春琦[1] 张润曦[1] XUE Yuting;SHI Chunqi;ZHANG Runxi(Institute of Microelectronic Circuits and Systems,East China Normal University,Shanghai,200062,CHN)
机构地区:[1]华东师范大学微电子电路与系统研究所,上海200062
出 处:《固体电子学研究与进展》2020年第3期173-179,共7页Research & Progress of SSE
基 金:华东师范大学“幸福之花”(智能+)先导研究基金项目(40500-20104-222099)。
摘 要:采用55 nm CMOS工艺设计并实现了一款用于77/79 GHz汽车雷达的宽带功率放大器。设计了一个大尺寸的W波段功率单元,优化功率单元内部结构及外部无源器件连接方法,减少了功率单元的寄生电容、电感和电阻。采用一种将晶体管寄生电容考虑在内的变压器耦合谐振峰值控制技术,提高了功放的增益及带宽。在共源共栅结构基础上,采用了一种共栅短路技术,提升输出功率并改善功放稳定性。测试结果表明,该功率放大器具有良好的输入、输出匹配性能,3 dB带宽达到9 GHz,饱和输出功率达到15.5 dBm,峰值效率达到12.5%,实现了优异的FOM值。A 55 nm CMOS wideband power amplifier for 77/79 GHz automotive radar applications was designed and implemented. A large-sized W-band power cell was designed,by optimizing both the transistor internal structure and the connection with its surrounding components,the parasitic capacitance,inductance and resistance of the power cell were reduced. A resonating peak control method taking into account the transistor parasitic capacitance was adopted for the transformer-coupled amplifier to achieve overall optimized bandwidth and gain performance. The power amplifier also employed a cascode stage using the common-gate-shorting topology to improve output power and stability. The measurement results show that the power amplifier achieves a 3 dB bandwidth of 9 GHz,a Psat of 15.5 dBm and a peak PAE of 12.5% with good input and output matching performance. The competitive FOM is also achieved.
关 键 词:功率单元 毫米波 功率放大器 谐振峰值控制 变压器耦合 共栅短路
分 类 号:TN43[电子电信—微电子学与固体电子学]
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