功率器件用n/p型4H-SiC同时形成欧姆接触工艺  

Processes of Simultaneous Formation of n/p-Type 4H-SiC Ohmic Contacts for Power Devices

作　　者：夏经华 桑玲 杨香[3] 郑柳 查祎英 田亮 田丽欣 张文婷 杨霏 吴军民 Xia Jinghua;Sang Ling;Yang Xiang;Zheng Liu;Zha Yiying;Tian Liang;Tian Lixin;Zhang Wenting;Yang Fei;Wu Junmin(State Key Laboratory of Advanced Power Transmission Technology,Beijing 102209,China;Global Energy Interconnection Research Institute Co.,Ltd.,Beijing 102209,China;Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)

机构地区：[1]先进输电技术国家重点实验室,北京102209 [2]全球能源互联网研究院有限公司,北京102209 [3]中国科学院半导体研究所,北京100083 [4]中国科学院微电子研究所,北京100029

出　　处：《微纳电子技术》2020年第7期568-576,共9页Micronanoelectronic Technology

基　　金：国家电网有限公司总部科技项目(5455GB180006)。

摘　　要：综述了在n/p型4H-SiC上同时形成欧姆接触技术的研究进展,包括欧姆接触理论、欧姆接触工艺及其优缺点以及热稳定性/可靠性等方面。重点介绍了基于Ni基金属的n/p型4H-SiC同时形成欧姆接触的工艺,包括以金属Ni为基础并结合Ti和Al与W等金属所形成的各种复合接触材料、通过合适的合金化退火工艺后得到的合金相、形成欧姆接触后得到的比接触电阻率,讨论了可能的欧姆接触形成机理,评估了其热稳定性/可靠性。讨论了在工艺上增加保护层对Ni基n/p型4H-SiC欧姆接触的性能以及热稳定性/可靠性等性能的影响。最后,评估了该工艺的研发现状和存在的问题,并提出未来的展望。The research progresses on simultaneous Ohmic contact formation on n/p-type 4 H-SiC are reviewed,including Ohmic contact theory,Ohmic contact processes and their advantages and disadvantages,and thermal stability/reliability,etc.The review focuses on Ni-based n/p-type 4 H-SiC simultaneous formation of Ohmic contact processes,including various composite contact materials based on Ni and with incorporation of other metals such as Ti,Al and W,their alloy phases obtained by various proper alloying anneal processes,and the specific contact resistivities got after forming Ohmic contacts.The possible mechanisms of forming Ohmic contacts are discussed,and the thermal stability/reliability are evaluated.The effects of additional protection layer on the performance and thermal stability/reliability of Ni-based n/p-type 4 H-SiC Ohmic contacts are discussed.In the end,the research and development statuses and existing problems of the process are evaluated,and the prospects are proposed.

关 键 词：n/p型4H-SiC Ni基金属 同时形成欧姆接触 欧姆接触机理 合金相 

分 类 号：TN305[电子电信—物理电子学] TN304.24