面向电力射频识别芯片的SPICE模型定制化开发  

SPICE Model Customized Development for RFID Chips in Electricity Application

作　　者：刘芳 陈燕宁 付振 马永旺 Liu Fang;Chen Yanning;Fu Zhen;Ma Yongwang(State Grid Key Laboratory of Power Industrial Chip Design and Analysis Technology,Bejing Smart-Chip Microelectronics Technology Co.,Ld,Bejing 100192,China;Beijing Engineering Research Center of High Reliability IC with Power Industrial Grade,Beijing Smart-Chip Microelectronics Technology Co,Ltd,Beijing 100192,China)

机构地区：[1]北京智芯微电子科技有限公司国家电网公司重点实验室电力芯片设计分析实验室,北京100192 [2]北京智芯微电子科技有限公司北京市高可靠性集成电路设计工程技术研究中心,北京100192

出　　处：《半导体技术》2020年第7期512-518,共7页Semiconductor Technology

基　　金：国家电网有限公司总部科技项目(546816190009)。

摘　　要：为了满足电力射频识别(RFID)芯片在-50~125℃的工作温区及高灵敏度的应用需求,定制化开发了芯片宽温区范围内高精度的MOSFET器件SPICE模型,该模型在RFID芯片关键模块中进行了验证。对器件尺寸设计、版图设计、电学性能测试、模型参数提取以及验证环节都进行了定制化开发。在器件模型参数提取环节采用了分块建模以及宏模型的建模方式同时提高了大尺寸和小尺寸器件的温度仿真精度。该模型在宽温度范围内阈值电压仿真与实测值差达到了10 mV以下,饱和电流精度在5%以下。环形振荡器的电路仿真精度相比通用模型提升了近50%,带隙基准源电路仿真精度提升了20 mV。In order to meet the requirements of the radio frequency identification(RFID)chip in the working temperature range of-50-125 ℃and the application of high sensitivity, the high precision SPICE model of the MOSFET device in a wide-temperature range was customized and developed. This model was verified in key circuit modules of the RFID chip. Customized development was carried out in device size design,layout design,electrical performance testing,model parameter extraction and circuit verification. Parameters were extracted by the bin model and marco model to improve the simulation accuracy of big and small channel devices in a wide-temperature range. In a wide-temperature range the threshold voltage simulation error is less than 10 mV, and the saturation current accuracy is less than 5%. The circuit simulation accuracy of the ring oscillator is improved nearly 50% and 20 mV in the bandgap circuit is enhanced compared with the general model.

关 键 词：SPICE模型 定制化开发 环形振荡器 带隙基准源 射频识别(RFID)芯片 

分 类 号：TN432[电子电信—微电子学与固体电子学]