采用低剂量H^+注入技术制备绝缘体上锗材料  

Preparation of GOI by Low Dose H^+ Implantation Technology

作　　者：刘运启 薛忠营[1] 张波[1] Liu Yunqi;Xue Zhongying;Zhang Bo(State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050 [2]中国科学院大学,北京100049

出　　处：《半导体技术》2020年第7期530-535,共6页Semiconductor Technology

基　　金：国家自然科学基金资助项目(61774163)。

摘　　要：利用离子剥离技术在Ge晶圆上制备绝缘体上锗(GOI)时,高剂量H+注入会导致Ge晶格损伤,而且剥离后Ge表面粗糙度较大。为了解决以上问题,在Si衬底上外延Ge/Si0.7Ge0.3/Ge异质结构代替纯Ge制备GOI,研究了异质结构样品有效剥离的临界H+注入条件和相应的GOI表面粗糙度。使用扫描电子显微镜(SEM)、透射电子显微镜(TEM)和原子力显微镜(AFM)对样品在H+注入和剥离后的裂缝形成过程、表面形貌、界面晶格损伤等进行观察和表征。实验结果表明,由于超薄Si0.7Ge0.3层对注入H+的吸附作用,剥离临界H+注入剂量由5.0×1016 cm-2下降到3.5×1016 cm-2,且在降低注入成本的同时也有效减少了H+注入对Ge晶格的损伤;由于剥离只发生在超薄Si0.7Ge0.3层,GOI表面粗糙度降低到1.42 nm (10μm×10μm)。该方法为制备高质量GOI材料提供了一种新思路。During the preparation of germanium on insulator(GOI) on Ge wafer by conventional ion cut technology,the lattice damage of Ge was caused by high dose H+ implantation, and the surface roughness of Ge after exfoliation was larger. In order to solve the above problems, Ge/Si0.7Ge0.3/Ge hetero-structure on Si substrate was used to prepare GOI instead of pure Ge. The critical H+ implantation conditions for film exfoliation of hetero-structure samples and the surface roughness of Ge after exfoliation were studied. The cracks formation process, the surface morphology and the interface lattice damage after H+ implantation and film exfoliation were observed and characterized by scanning electron microscope(SEM), transmission electron microscope(TEM) and atomic force microscope(AFM). The experiment results indicate that due to the H+ trapping effect of ultra-thin Si0.7Ge0.3 layer, the critical H+ implantation dose for ion cut drops from 5.0×1016 cm-2 to 3.5×1016 cm-2, which may reduce the process costs efficiently as well as attenuating the crystal damages induced by ion implantation. Because the film exfoliation occurs along the ultra-thin Si0.7Ge0.3 layer, the surface roughness of the GOI is as low as 1.42 nm(10 μm×10 μm). This method provides a new way to prepare high quality GOI materials.

关 键 词：绝缘体上锗(GOI) Ge/Si0.7Ge0.3/Ge 低剂量 H^+吸附 剥离 

分 类 号：TN304[电子电信—物理电子学]