微波退火对原子层沉积TiO2薄膜性能的影响  

Effect of Microwave Annealing on Performance of TiO2 Films Prepared by Atomic Layer Deposition

作　　者：杨德威 李赛 杨雯[1] 杜凯翔 马春阳 葛文 杨培志[1] Yang Dewei;Li Sai;Yang Wen;Du Kaixiang;Ma Chunyang;Ge Wen;Yang Peizhi(Key Laboratory of Renewable Energy Advanced Materials and Manufacturing Technology,Ministry of Education,Yunnan Normal University,Kunming 650500,China)

机构地区：[1]云南师范大学可再生能源材料先进技术与制备教育部重点实验室,昆明650500

出　　处：《半导体技术》2020年第7期536-542,共7页Semiconductor Technology

基　　金：国家自然科学基金资助项目(U1802257,21701140);云南省基础研究重点项目(2017FA024);云南省高校科技创新团队支持计划资助项目。

摘　　要：采用原子层沉积(ALD)技术,以四氯化钛和水为前驱体,在钠钙玻璃衬底上沉积TiO2薄膜,并进行微波退火处理。通过拉曼光谱、紫外-可见分光光度计、X射线衍射仪(XRD)和原子力显微镜(AFM)等,对不同微波退火温度下TiO2薄膜的表面形貌、物相结构和光学性能进行了表征。结果表明,所制备的样品为锐钛矿型TiO2薄膜,微波退火温度达到500℃时晶粒尺寸最大,为21.71 nm。其拉曼光谱的144 cm-1峰位没有发生偏移,但强度略有变化。随着微波退火温度的升高,TiO2薄膜的透过率先下降后升高,折射率和消光系数则先增加后下降。拟合得到的TiO2薄膜的禁带宽度从3.43 eV降到3.17 eV。通过AFM观察到微波退火促进了原子重新排列,改善了表面粗糙度,形成了均匀的锐钛矿型TiO2薄膜。Using titanium tetrachloride and water as the precursors, TiO2 thin films were deposited on the sodium calcium glass substrate by atomic layer deposition(ALD) technology and microwave annealing. Surface morphologies, phase structures and optical properties of TiO2 thin films at different microwave annealing temperatures were investigated by Raman spectra, ultraviolet-visible spectrophotometer, X-ray diffraction(XRD) and atomic force microscopy(AFM). The results show that the prepared samples are anatase TiO2 thin films, the maximum size of grain(21.71 nm) is obtained when the microwave annealing temperature reaches 500 ℃. The 144 cm-1 peak position of the Raman spectra does not shift, but the intensity changes slightly. With the increase of the microwave annealing temperature, the transmittance of the TiO2 thin film decreases first and then increases, while the refractive index and the extinction coefficient increase first and then decrease. The band gap width obtained by fitting is reduced from 3.43 eV to 3.17 eV. AFM images show that microwave annealing promotes atom rearrangement and improves surface roughness, and a uniform anatase TiO2 thin film is formed.

关 键 词：锐钛矿型TiO2 原子层沉积(ALD) 微波退火(MWA) 表面形貌 消光系数 

分 类 号：TN304.21[电子电信—物理电子学]