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作 者:Yue Zhao Kai Wang Shuang Yuan Yonghui Ma Guojian Li Qiang Wang
机构地区:[1]Institute of Microscale Optoelectronics,Shenzhen University,Shenzhen 578060,China [2]Key Laboratory of Electromagnetic Processing of Materials(Ministry of Education),Northeastern University,Shenyang 110819,China [3]Department of New Energy Science and Engineering,School of Metallurgy,Northeastern University,Shenyang 110819,China [4]Institute of Metal Research,Chinese Academy of Sciences,Shenyang 110016,China
出 处:《Journal of Materials Science & Technology》2020年第11期127-135,共9页材料科学技术(英文版)
基 金:the National Natural Science Foundation of China(Nos.51425401,51690162);Liaoning Innovative Research Team in University(No.LT2017011);the Fundamental Research Funds for the Central Universities(Nos.N160907001,N180915002 and N180912004)。
摘 要:The morphology evolution and magnetic properties of Co films–native oxide Si(100)were investigated at 873,973,and 1073 K in a high magnetic field of 11.5 T.Formation of Kirkendall voids in the Co films was found to cause morphology evolution due to the difference in diffusion flux of Co and Si atoms through the native oxide layer.The high magnetic fields had considerable effect on the morphology evolution by accelerating nanoscale Kirkendall effect.The diffusion mechanism in the presence of high magnetic fields was given to explain the increase of diffusion coefficient.The morphology evolution of Co films on native oxide Si(100)under high magnetic fields during annealing resulted in the magnetic properties variation.
关 键 词:Thin films ANNEALING DIFFUSION Kirkendall effect High magnetic field
分 类 号:TB383.1[一般工业技术—材料科学与工程]
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