Epitaxial fabrication of monolayer copper arsenide on Cu(111)  

作　　者：Shuai Zhang Yang Song Jin Mei Li Zhenyu Wang Chen Liu Jia-Ou Wang Lei Gao Jian-Chen Lu Yu Yang Zhang Xiao Lin Jinbo Pan Shi Xuan Du Hong-Jun Gao 张帅;宋洋;李金梅;王振宇;刘晨;王嘉鸥;高蕾;卢建臣;张余洋;林晓;潘金波;杜世萱;高鸿钧(Institute of Physics&University of Chinese Academy of Sciences,Chinese Academy of Sciences,Beijing 100190,China;Institute of High Energy Physics,Chinese Academy of Sciences,Beijing 100190,China;Kunming University of Science and Technology,Kunming 650500,China;CAS Center for Excellence in Topological Quantum Computation,University of Chinese Academy of Sciences,Beijing 100190,China)

机构地区：[1]Institute of Physics&University of Chinese Academy of Sciences,Chinese Academy of Sciences,Beijing 100190,China [2]Institute of High Energy Physics,Chinese Academy of Sciences,Beijing 100190,China [3]Kunming University of Science and Technology,Kunming 650500,China [4]CAS Center for Excellence in Topological Quantum Computation,University of Chinese Academy of Sciences,Beijing 100190,China

出　　处：《Chinese Physics B》2020年第7期194-198,共5页中国物理B（英文版）

基　　金：Project supported by the National Key Research&Development Program of China(Grant Nos.2016YFA0202300 and 2018YFA0305800);the National Natural Science Foundation of China(Grant Nos.61888102,11604373,61622116,and 51872284);the Strategic Priority Research Program of Chinese Academy of Sciences(Grant Nos.XDB30000000 and XDB28000000);the University of Chinese Academy of Sciences.A portion of the research was performed in the CAS Key Laboratory of Vacuum Physics.

摘　　要：We report the epitaxial growth of monolayer copper arsenide(CuAs)with a honeycomb lattice on Cu(111)by molecular beam epitaxy(MBE).Scanning tunneling microscopy(STM),low energy electron diffraction(LEED),x-ray photoelectron spectroscopy(XPS),and density functional theory(DFT)verify the√3×√3 superlattice of monolayer CuAs on Cu(111)substrate.Angle-resolved photoemission spectroscopy(ARPES)measurements together with DFT calculations demonstrate the electronic band structures of monolayer CuAs and reveal its metallic nature.Further calculations show that charge transfer from Cu(111)substrate to monolayer CuAs lifts the Fermi level and tunes the band structure of the monolayer CuAs.This high-quality epitaxial monolayer CuAs with potential tunable band gap holds promise on the applications in nano-electronic devices.

关 键 词：copper arsenide(CuAs) band structure scanning tunneling microscopy(STM) 

分 类 号：TQ131.21[化学工程—无机化工] O782[理学—晶体学]