Stress and strain analysis of Si-based Ⅲ-V template fabricated by ion-slicing  

作　　者：Shuyan Zhao Yuxin Song Hao Liang Tingting Jin Jiajie Lin Li Yue Tiangui You Chang Wang Xin Ou Shumin Wang 赵舒燕;宋禹忻;梁好;金婷婷;林家杰;岳丽;游天桂;王长;欧欣;王庶民(State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049 China;Department of Microtechnology and Nanoscience,Chalmers University of Technology,Gothenburg 41296,Sweden)

机构地区：[1]State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences,Shanghai 200050,China [2]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049 China [3]Department of Microtechnology and Nanoscience,Chalmers University of Technology,Gothenburg 41296,Sweden

出　　处：《Chinese Physics B》2020年第7期481-488,共8页中国物理B（英文版）

基　　金：Project supported by the National Key Research and Development Program of China(Grant No.2017YFE0131300);the National Natural Science Foundation of China(Grant Nos.U1732268,61874128,11622545,61851406,11705262,and 61804157);the Frontier Science Key Program of the Chinese Academy of Sciences(Grant No.QYZDY-SSW-JSC032);the Chinese-Austrian Cooperative Research and Development Project(Grant No.GJHZ201950);the Science and Technology Innovation Action Plan Program of Shanghai,China(Grant No.17511106202);the Program of Shanghai Academic Research Leader,China(Grant No.19XD1404600);the Sailing Program of Shanghai,China(Grant Nos.19YF1456200 and 19YF1456400);the K C Wong Education Foundation(Grant No.GJTD-2019-11).

摘　　要：Strain and stress were simulated using finite element method(FEM)for threeⅢ-V-on-Insulator(Ⅲ-VOI)structures,i.e.,InP/SiO2/Si,InP/Al2O3/SiO2/Si,and GaAs/Al2O3/SiO2/Si,fabricated by ion-slicing as the substrates for optoelectronic devices on Si.The thermal strain/stress imposes no risk for optoelectronic structures grown on InPOI at a normal growth temperature using molecular beam epitaxy.Structures grown on GaAsOI are more dangerous than those on InPOI due to a limited critical thickness.The intermedia Al2O3 layer was intended to increase the adherence while it brings in the largest risk.The simulated results reveal thermal stress on Al2O3 over 1 GPa,which is much higher than its critical stress for interfacial fracture.InPOI without an Al2O3 layer is more suitable as the substrate for optoelectronic integration on Si.

关 键 词：Ⅲ-VOI template finite element method(FEM) critical thickness 

分 类 号：TN305[电子电信—物理电子学]