Ionic liquid gating control of planar Hall effect in Ni80Fe20/HfO2 heterostructures  

作　　者：Yang-Ping Wang Fu-Fu Liu Cai Zhou Chang-Jun Jiang 汪样平;刘福福;周偲;蒋长军(Key Laboratory for Magnetism and Magnetic Materials,Ministry of Education,Lanzhou University,Lanzhou 730000,China;Key Laboratory of Special Function Materials and Structure Design,Ministry of Education,Lanzhou University,Lanzhou 730000,China;Hubei Province Engineering Research Center for Intelligent Micro-nano Medical Equipment and Key Technologies,School of Electrical and Electronics Engineering,Wuhan 430202,China)

机构地区：[1]Key Laboratory for Magnetism and Magnetic Materials,Ministry of Education,Lanzhou University,Lanzhou 730000,China [2]Key Laboratory of Special Function Materials and Structure Design,Ministry of Education,Lanzhou University,Lanzhou 730000,China [3]Hubei Province Engineering Research Center for Intelligent Micro-nano Medical Equipment and Key Technologies,School of Electrical and Electronics Engineering,Wuhan 430202,China

出　　处：《Chinese Physics B》2020年第7期537-541,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.51671099 and 11974149);the Open Foundation Project of Jiangsu Key Laboratory of Thin Films(Grant No.KJS1745);the Program for Changjiang Scholars and Innovative Research Team in University,China(Grant No.IRT16R35);the Fundamental Research Funds for the Central Universities,China.

摘　　要：We report a tunable transverse magnetoresistance of the planar Hall effect(PHE),up to 48%in the Ni80Fe20/HfO2 heterostructures.This control is achieved by applying a gate voltage with an ionic liquid technique at ultra-low voltage,which exhibits a gate-dependent PHE.Moreover,in the range of 0-V to 1-V gate voltage,transverse magnetoresistance of PHE can be continuously regulated.Ferromagnetic resonance(FMR)also demonstrates the shift of the resonance field at low gate voltage.This provides a new method for the design of the electric field continuous control spintronics device with ultra-low energy consumption.

关 键 词：ionic liquid gating planar Hall effect electric field regulation 

分 类 号：TM271[一般工业技术—材料科学与工程]