Photoresponsive characteristics of thin film transistors with perovskite quantum dots embedded amorphous InGaZnO channels  

作　　者：Mei-Na Zhang Yan Shao Xiao-Lin Wang Xiaohan Wu Wen-Jun Liu Shi-Jin Ding 张美娜;邵龑;王晓琳;吴小晗;刘文军;丁士进(State Key Laboratory of ASIC and System,School of Microelectronics,Fudan University,Shanghai 200433,China;Center for Information Photonics and Energy Materials,Shenzhen Institutes of Advanced Technology,Chinese Academy of Sciences,Shenzhen 518055,China)

机构地区：[1]State Key Laboratory of ASIC and System,School of Microelectronics,Fudan University,Shanghai 200433,China [2]Center for Information Photonics and Energy Materials,Shenzhen Institutes of Advanced Technology,Chinese Academy of Sciences,Shenzhen 518055,China

出　　处：《Chinese Physics B》2020年第7期588-595,共8页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.61874029);the National Key Technologies R&D Program of China(Grant No.2015ZX02102-003).

摘　　要：Photodetectors based on amorphous InGaZnO(a-IGZO)thin film transistor(TFT)and halide perovskites have attracted attention in recent years.However,such a stack assembly of a halide perovskite layer/an a-IGZO channel,even with an organic semiconductor film inserted between them,easily has a very limited photoresponsivity.In this article,we investigate photoresponsive characteristics of TFTs by using CsPbX3(X=Br or I)quantum dots(QDs)embedded into the a-IGZO channel,and attain a high photoresponsivity over 10^3A·W^-1,an excellent detectivity in the order of 10^16 Jones,and a light-to-dark current ratio up to 10^5 under visible lights.This should be mainly attributed to the improved transfer efficiency of photoelectrons from the QDs to the a-IGZO channel.Moreover,spectrally selective photodetection is demonstrated by introducing halide perovskite QDs with different bandgaps.Thus,this work provides a novel strategy of device structure optimization for significantly improving the photoresponsive characteristics of TFT photodetectors.

关 键 词：perovskite quantum dots a-IGZO thin-film transistor photoresponsive characteristics 

分 类 号：TN321.5[电子电信—物理电子学]