晶须掺杂交联聚苯乙烯复合材料的制备及沿面闪络性能研究  

Preparation and Surface Flashover Properties of Crosslinked Polystyrene Composite Doped with Whisker

作　　者：刘文元[1] 赵小什 段荔[1] 柯昌凤[1] 霍艳坤 陈昌华[1] LIU Wenyuan;ZHAO Xiaoshi;DUAN Li;KE Changfeng;HUO Yankun;CHEN Changhua(Northwest Institute of Nuclear Technology,Xi'an 710024,China;Xiangtan University,Xiangtan 411105,China)

机构地区：[1]西北核技术研究所,陕西西安710024 [2]湘潭大学,湖南湘潭411105

出　　处：《绝缘材料》2020年第7期18-22,共5页Insulating Materials

摘　　要：以交联聚苯乙烯(CLPS)为基体,分别用四针状氧化锌(T-ZnO)晶须和碱式硫酸镁(MOS)晶须掺杂改性,制备了两类晶须/交联聚苯乙烯复合材料。研究了晶须掺杂对复合材料结构、表面电阻率及真空沿面闪络性能的影响。结果表明:T-ZnO晶须的加入降低了复合材料的表面电阻率,而MOS晶须的加入对复合材料的表面电阻率几乎没有影响;当MOS晶须质量分数为2%时,复合材料的真空沿面闪络击穿电压较CLPS提升了40%,而T-ZnO晶须的加入降低了复合材料的真空沿面闪络电压。Two kinds of whisker/crosslinked polystyrene(CLPS) composites were prepared by adding T-zinc oxide(T-ZnO) whisker and basic magnesium sulfate(MOS) whisker, respectively, to CLPS matrix.The effect of whisker addition on the structure, surface resistivity, and vacuum surface flashover characteristics of the composites were studied. The results show that the addition of T-ZnO whisker reduces the surface resistivity of T-ZnO/CLPS composite, while the addition of MOS whisker has little influence on the surface resistivity of MOS/CLPS composite. When the mass fraction of MOS whisker is 2%, the flashover voltage of MOS/CLPS composite is 40% higher than that of CLPS. However, the addition of T-ZnO whisker decreases the vacuum flashover voltage of T-ZnO/CLPS composite.

关 键 词：真空沿面闪络 氧化锌晶须 硫酸镁晶须 交联聚苯乙烯 

分 类 号：TM215[一般工业技术—材料科学与工程]