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作 者:程俊红[1] 肖震霞 CHENG Junhong;XIAO Zhenxia(Department of Electrical and Electronic Engineering,Shijiazhuang University of Applied Technology,Shijiazhuang 050080,China;College of Information Engineering,Hebei GEO University,Shijiazhuang 050031,China)
机构地区:[1]石家庄职业技术学院电气与电子工程系,石家庄050080 [2]河北地质大学信息工程学院,石家庄050031
出 处:《电源学报》2020年第4期193-199,共7页Journal of Power Supply
基 金:河北省人才工程培养经费资助项目(A201500119)。
摘 要:测试半导体GaN功率开关器件灵敏度对掌握器件性能具有重要意义,提出一种新型半导体GaN功率开关器件灵敏度测试技术。通过分析半导体GaN功率开关器件的导通电阻与击穿电压关系、空穴电流与栅极电流关系,掌握功率开关器件击穿机理,在此基础上,测试其灵敏度;根据灵敏度测试原理与微频通道衰减值周期检查原理,测量功率开关器件微频信号功率和微频通道衰减值,汇总微频通道衰减值和最后1次开关灵敏时的衰减值,得到其灵敏度。实验结果表明:所提测试技术在测量灵敏度过程中,平均测试误差为0.044 dB,仅平均花费9.61 ms,是一种高效、可靠的半导体GaN功率开关器件灵敏度测试技术。Testing the sensitivity of a semiconductor GaN power switching device is important for controlling its performance.A novel sensitivity testing technology for semiconductor GaN power switching devices is proposed.Through analyzing the relationship between the conduction resistance and breakdown voltage of a semiconductor GaN power switching device and that between the hole current and gate current,the device’s breakdown mechanism is acquired.On this basis,its sensitivity can be tested.According to the principle for sensitivity test and that for periodic check of the microfrequency channel attenuation value,the microfrequency signal power and microfrequency channel attenuation value of the power switching device are measured,and the microfrequency channel attenuation value and the attenuation value for the last switching time are summarized.As a result,the sensitivity of the semiconductor GaN power switching device is obtained.Experimental results show that when using the proposed testing technology,the average test error was0.03 dB and the average time consumption was only 9.42 ms,indicating that it is an efficient and reliable sensitivity testing technology for semiconductor GaN power switching devices.
关 键 词:半导体GaN 功率开关器件 击穿机理 灵敏度 通道衰减值 测试技术
分 类 号:TN304.2[电子电信—物理电子学]
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