瓦片式TR组件用AlN陶瓷基板制造工艺研究  

Study on Manufacturing Technology of AlN Ceramic Substrate for TR Module of Tile Type

作　　者：王颖麟 钱超 李俊 赵明 WANG Yinglin;QIAN Chao;LI Jun;ZHAO Ming(The 2nd Research Institute of CETC,Taiyuan 030024,China;Beijing Research Institute of Telemetry,Beijing 100076,China)

机构地区：[1]中国电子科技集团公司第二研究所,山西太原030024 [2]北京遥测技术研究所研究所,北京100076

出　　处：《电子工艺技术》2020年第4期208-210,229,共4页Electronics Process Technology

基　　金：“十三五”装备预研项目。

摘　　要：AlN(氮化铝)多层基板技术可实现瓦片式TR组件的高可靠和高密度集成。针对瓦片式TR组件对高导热、高布线密度需求,研究了高温共烧多层AlN基板制造的关键工艺,主要包括高精度层叠工艺、烧结工艺、表面镀覆工艺等。通过优化工艺参数,制作了微波传输线测试用AlN基板样件和瓦片式TR组件用AlN基板。对样件的电性能和物理性能进行测试,满足瓦片式TR组件使用要求。AlN can be the ideal technology that realizing the integration of high reliability and high density for the generation of tile type TR module.Aim at the demand of the high thermal conductivity and high density wiring substrate,the key technology of the high temperature co-firing multilayer AlN substrate is studied,including the high precision lamination,the co-firing,surface plating process,etc.By optimizing process parameters,AlN substrate sample for microwave transmission line test and AlN substrate for tile TR modules are prepared.The electrical and physical properties of the sample are tested,and the technology can meet the requirements of tile TR module.

关 键 词：TR组件 瓦片式 AlN陶瓷基板 多层共烧 

分 类 号：TN605[电子电信—电路与系统]