柔性C-ZnO传感器的制备及其气敏性能研究  

Preparation and Gas-sensing Properties of Flexible C-doped ZnO Sensors

作　　者：周旺 钱波[1] 方小亮 高阳 轩福贞[1] ZHOU Wang;QIAN Bo;FANG Xiao-liang;GAO Yang;XUAN Fu-zhen(School of Mechanical and Power Engineering,East China University of Science and Technology,Shanghai 200237,China)

机构地区：[1]华东理工大学机械与动力工程学院,上海200237

出　　处：《仪表技术与传感器》2020年第7期23-26,51,共5页Instrument Technique and Sensor

摘　　要：采用了高效可控的激光微处理技术制备了掺碳的纳米球状氧化锌,该制备方法包含2部分:聚酰亚胺的碳化,碳电极上激光局部加热合成氧化锌。利用配备有能量色散X射线光谱的扫描电子显微镜,X射线衍射仪,对样品的微观结构、表面形貌与组成成分进行了研究。研究C-ZnO纳米复合材料在室温(25℃)下的气敏特性,如阻值-浓度特性;响应时间与恢复时间和稳定性。基于C-ZnO的传感器不仅显示出在1 000 ppm NO2浓度下良好的响应(1.31%),快速的响应时间(114 s)和恢复时间(428 s),还具有良好的稳定性(30 d)。与传统的ZnO基气体传感器不同,设计好的传感器通过气体传感测试呈现了P型半导体的特性;另外文中也讨论了N-P转变的可能机制,结果表明掺杂C或者在低工作温度下可能导致ZnO的P型半导体行为。In this work,C doped ZnO nanospheres was prepared based on highly efficient and scalable laser micro-processing techniques,including laser direct writing of carbonized electrode on PI and laser localized hydrothermal synthesis of ZnO on the electrode.The samples were characterized by scanning electron microscope equipped with an energy-dispersive X-ray spectroscopy(EDX),X-ray diffraction.The gas sensing characteristics of the sensor,such as the characteristics of resistance and concentration,response and recovery time and stability were systematically investigated.The ZnO based sensor showed the response of 1.31%,quick response and recovery time and a good stability(30 days)for 1 000 ppm NO2 in room temperature(25 ℃).Unlike the traditional ZnO based gas sensor,the sensor in this paper presented the characteristics of p-type semiconductor through gas sensing tests,which could be attributed to the possible doping of C and low performing temperature.

关 键 词：C掺杂ZnO 聚酰亚胺 激光 碳化 NO2 

分 类 号：TQ174[化学工程—陶瓷工业]