PMMA表面高功率脉冲磁控溅射制备ITO涂层  

Preparation of ITO Coating on PMMA by High-power Pulse Magnetron Sputtering

作　　者：冯军[1] 李必文[1] 陈文波[1] 陈美艳[2] 金凡亚[2] 但敏[2] Feng Jun;Li Biwen;Chen Wenbo;Chen Meiyan;Jin Fanya;Dan Min(University of South China,Hengyang 421001,China;Southwestern Institute of Physics,Chengdu 610041,China)

机构地区：[1]南华大学,湖南衡阳421001 [2]核工业西南物理研究院,四川成都610041

出　　处：《稀有金属材料与工程》2020年第7期2229-2233,共5页Rare Metal Materials and Engineering

基　　金：National Magnetic Confinement Fusion Energy Development Research Project(2018YFE0313100);Nanhua University Doctoral Initial Funding(2016XQD29)。

摘　　要：采用高功率脉冲磁控溅射技术在PMMA基体上制备了ITO涂层。利用XRD、SEM对涂层进行了相结构的分析,并进行了划痕实验、光电性能测试。结果表明:偏压、氢氩流量比等工艺参数对涂层的相结构、膜基结合力、光电性能均有影响。增大偏压,膜基结合力将增强,偏压达到240 V时,膜基结合力最好(56.5 N)。偏压由0 V增加到160 V的过程中,涂层晶粒增大,透射率变高(由82.24%增至89.82%),电阻率变低(由0.006571减至0.000543Ω·cm)。当氢氩流量比由0增至0.05,透射率变低(由89.82%减至56.12%)。氢氩流量比由0增至0.03,电阻率变低(由0.000543减至0.000212Ω·cm);氢氩流量比由0.03增至0.05,电阻率变高(由0.000212增至0.000373Ω·cm)。ITO coatings were deposited on polymethyl methacrylate(PMMA)by high-power pulse magnetron sputtering(HPPMS).The effects of HPPMS on the coatings under different parameters were investigated,and the phase,bonding strength,transmittance and resistivity were characterized by XRD,scratch tester,spectrophotometer and Hall test platform,respectively.The results show that phase,bonding strength,transmittance and resistivity are affected by pulsed bias and flow rate ratio of hydrogen and argon.With increasing the pulsed bias,the bonding strength becomes better,and the best bonding strength is 56.5 N when pulsed bias is 240 V.With increasing the pulsed bias from 0 V to 160 V,the grain size gets bigger,the transmittance becomes better(increasing from 82.24%to 89.82%)and the resistivity also becomes better(decreasing from 0.006571 to 0.000543Ω·cm).With increasing the flow rate ratio of hydrogen and argon from 0 to 0.05,the transmittance becomes worse(decreasing from 89.82%to 56.12%).With increasing the flow rate ratio of hydrogen and argon from 0 to 0.03,the resistivity becomes better(decreasing from 0.000543 to 0.000212Ω·cm).With increasing the flow rate ratio of hydrogen and argon from 0.03 to 0.05,the resistivity becomes worse(increasing from 0.000212 to 0.000373Ω·cm).

关 键 词：ITO涂层 高功率脉冲磁控溅射 PMMA 脉冲偏压 氢氩流量比 

分 类 号：TB306[一般工业技术—材料科学与工程]