Promising high-thermal-conductivity substrate material for high-power electronic device:silicon nitride ceramics  

作　　者：Feng Hu Zhi-Peng Xie Jian Zhang Zun-Lan Hu Di An 

机构地区：[1]State Key Laboratory of New Ceramics and Fine Processing,School of Materials Science and Engineering,Tsinghua University,Beijing 100084,China

出　　处：《Rare Metals》2020年第5期463-478,共16页稀有金属（英文版）

基　　金：financially supported by the National Key Research and Development Program of China (No.2017YFB0310400);the National Natural Science Foundation of China (No.51427802)。

摘　　要：High-thermal-conductivity silicon nitride ceramic substrates are indispensable components for nextgeneration high-power electronic devices because of their excellent mechanical properties and high thermal conductivities, which make them suitable for applications in complex and extreme environments. Here, we present an overview of the recent developments in the preparation of high-thermal-conductivity silicon nitride ceramics. First,the factors affecting the thermal conductivity of silicon nitride ceramics are described. These include lattice oxygen and grain boundary phases, as well the oxygen content of the crystal lattice, which is the main influencing factor.Then, the methods to prepare high-thermal-conductivity silicon nitride ceramics are presented. Recent work on the preparation of high-thermal-conductivity silicon nitride is described in detail, including the raw materials used and the forming and sintering processes. Although great progress has been made, the development of a high-quality,low-cost fabrication process remains a challenge. Nevertheless, we believe that high-thermal-conductivity silicon nitride substrates are promising for massive practical applications in the next generation of high-power electronic devices.

关 键 词：Silicon nitride ceramics High thermal conductivity Preparation technique 

分 类 号：TQ174.758.12[化学工程—陶瓷工业]