Comparison of Cavities Formed in Single Crystalline and Polycrystalline α-SiC after H Implantation  

作　　者：Qing Liao Long Kang Tong-Min Zhang Hui-Ping Liu Tao Wang Xiao-Gang Li Jin-Yu Li Zhen Yang Bing-Sheng Li 廖庆;康龙;张桐民;刘会平;王韬;李小刚;李锦钰;杨振;李炳生(State Key Laboratory for Environment-Friendly Energy Materials,Southwest University of Science and Technology,Mianyang 621010,China;Institute of Modern Physics,Chinese Academy of Sciences,Lanzhou 730000,China;Institute of Fluid Physics,China Academy of Engineering Physics,Mianyang 621900,China;Sino-French Institute of Nuclear Engineering and Technology,Sun Yat-Sen University,Zhuhai 519082,China)

机构地区：[1]State Key Laboratory for Environment-Friendly Energy Materials,Southwest University of Science and Technology,Mianyang 621010,China [2]Institute of Modern Physics,Chinese Academy of Sciences,Lanzhou 730000,China [3]Institute of Fluid Physics,China Academy of Engineering Physics,Mianyang 621900,China [4]Sino-French Institute of Nuclear Engineering and Technology,Sun Yat-Sen University,Zhuhai 519082,China

出　　处：《Chinese Physics Letters》2020年第7期51-55,共5页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China(Grant Nos.U1832133 and 11905206)。

摘　　要：Cavities and extended defects formed in single crystalline and polycrystalline α-SiC implanted with H+ions are compared.The samples are investigated by cross-sectional transmission electron microscopy.H2 bubbles are formed during H implantation and H2 molecules escape the sample to form cavities during thermal annealing at 1100℃.Microcracks and the extended defects prefer to nucleate in single crystalline α-SiC,but not polycrystalline α-Si C.Grain boundaries can account for the experimental results.The formation of cavities on grain boundaries is investigated.

关 键 词：CRYSTALLINE IMPLANTATION sectional 

分 类 号：TQ163.4[化学工程—高温制品工业]