Synthesis of Highly Stable One-Dimensional Black Phosphorus/h-BN Heterostructures:A Novel Flexible Electronic Platform  

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作  者:Jingyan Song Shuai Duan Xin Chen Xiangjun Li Bingchao Yang Xiaobing Liu 宋京岩;段帅;陈欣;李相君;杨兵超;刘晓兵(Laboratory of High Pressure Physics and Material Science(HPPMS),School of Physics and Physical Engineering,Qufu Normal University,Qufu 273100,China)

机构地区:[1]Laboratory of High Pressure Physics and Material Science(HPPMS),School of Physics and Physical Engineering,Qufu Normal University,Qufu 273100,China

出  处:《Chinese Physics Letters》2020年第7期65-70,共6页中国物理快报(英文版)

基  金:Supported by the National Natural Science Foundation of China(Grant Nos.11804184,11974208,and 21905159);the Shandong Provincial Science Foundation(Grant Nos.ZR2019MA054,2019KJJ020,and ZR2019BA010)。

摘  要:Layered black phosphorus(BP)has recently emerged as a promising semiconductor because of its tunable band gap,high carrier mobility and strongly in-plane anisotropic properties.One-dimensional(1 D)BP materials are attractive for applications in electronic and thermal devices,owing to their tailored charge and phonon transports along certain orientations.However,the fabrication of 1 D BP materials still remains elusive thus far.We herein report the successful synthesis and characterization of nanotube-like BP for the first time by a selective composite with hexagonal boron nitride(h-BN)nanotubes under high pressure and high temperature conditions.The produced 1 D BP/h-BN composites possess flexible diameter,length and thickness by adjusting the experimental synthesis parameters.Interestingly,it is important to notice that the stability of our BP sample has been significantly improved under the formation of heterostructures,which can actively promote their commercial applications.Our experimental work,together with first-principles calculations,presents a new scalable strategy of designing 1 D tube-like BP/h-BN heterostructures that are promising candidates for flexible and high efficiency electronic platform.

关 键 词:One HIGHLY ATTRACTIVE 

分 类 号:TN304[电子电信—物理电子学]

 

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