Ultrathin Al Oxide Seed Layer for Atomic Layer Deposition of High-κ Al2O3 Dielectrics on Graphene  

作　　者：Hang Yang Wei Chen Ming-Yang Li Feng Xiong Guang Wang Sen Zhang Chu-Yun Deng Gang Peng Shi-Qiao Qin 杨航;陈卫;李铭洋;熊峰;王广;张森;邓楚芸;彭刚;秦石乔(College of Liberal Arts and Science,National University of Defense Technology,Changsha 410073,China;China Aerodynamics Research and Development Center,Hypervelocity Aerodynamics Institute,Mianyang 621000,China;College of Advanced Interdisciplinary Studies,National University of Defense Technology,Changsha 410073,China;College of Aerospace Science and Engineering,National University of Defense Technology,Changsha 410073,China)

机构地区：[1]College of Liberal Arts and Science,National University of Defense Technology,Changsha 410073,China [2]China Aerodynamics Research and Development Center,Hypervelocity Aerodynamics Institute,Mianyang 621000,China [3]College of Advanced Interdisciplinary Studies,National University of Defense Technology,Changsha 410073,China [4]College of Aerospace Science and Engineering,National University of Defense Technology,Changsha 410073,China

出　　处：《Chinese Physics Letters》2020年第7期80-85,共6页中国物理快报（英文版）

基　　金：Supported by Strengthening Project of Science and Technology Commission Foundation under Grant No.2019JCJQZD。

摘　　要：Due to the lack of surface dangling bonds in graphene,the direct growth of high-κ films via atomic layer deposition(ALD) technique often produces the dielectrics with a poor quality,which hinders its integration in modern semiconductor industry.Previous pretreatment approaches,such as chemical functionalization with ozone and plasma treatments,would inevitably degrade the quality of the underlying graphene.Here,we tackled this problem by utilizing an effective and convenient physical method.In detail,the graphene surface was pretreated with the deposition of thermally evaporated ultrathin Al metal layer prior to the Al2O3 growth by ALD.Then the device was placed in a drying oven for 30 min to be naturally oxidized as a seed layer.With the assistance of an Al oxide seed layer,pinhole-free Al2O3 dielectrics growth on graphene was achieved.No detective defects or disorders were introduced into graphene by Raman characterization.Moreover,our fabricated graphene topgated field effect transistor exhibited high mobility(~6200 cm2V-1s-1) and high transconductance(~117 μS).Thin dielectrics demonstrated a relative permittivity of 6.5 over a large area and a leakage current less than1.6 p A/μm2.These results indicate that Al oxide functionalization is a promising pathway to achieve scaled gate dielectrics on graphene with high performance.

关 键 词：BONDS utilizing CONVENIENT 

分 类 号：O614.31[理学—无机化学]