荷控忆阻器等效电路分析模型及其电路特性分析  

Equivalent circuit analysis model and circuit characteristics analysis of load controlled memristor

作　　者：程晓东 姜竹楠 Cheng Xiaodong;Jiang Zhunan(Electric Power College of Shenyang Institute of Technology,Shenyang Liaoning,110000)

机构地区：[1]沈阳工程学院电力学院,辽宁沈阳110000

出　　处：《电子测试》2020年第17期58-60,共3页Electronic Test

基　　金：沈阳工程学院2019年大学生创新创业训练计划项目(201911632158)。

摘　　要：荷孔忆阻器是一种具有记忆功能的二端式电路元件,按照Φ-q关系式与泰勒级数模式所构建的荷控忆阻器等效电路分析模型,对三次非线性荷控忆阻器模型进行深入探究分析,面向基于不同参数条件的荷控忆阻器特性开展研究,即是否有源性以及伏安关系等等。经过分析可以得出,忆阻器伏安关系拥有斜体8字形紧磁滞的回线特点,随着参数符号改变,荷控忆阻器同样会于有源性与无源性间实时转换,使得电路特性也随之变化。相比无源性荷控忆阻器,有源性荷控忆阻器更加适用于二次谐波信号。The charge hole memristor is a kind of two terminal circuit element with memory function.According to the equivalent circuit analysis model of charge controlled memristor based onΦ-Q relation and Taylor series model,the cubic nonlinear charge controlled memristor model is deeply explored and analyzed,and the characteristics of charge controlled memristor based on different parameter conditions are studied,that is,whether it is active or not and volt ampere relationship.After analysis,it can be concluded that the volt ampere relationship of memristor has the characteristics of a closed hysteresis loop with the shape of an oblique eight.With the change of parameter symbols,the load controlled memristor will also convert between the active and passive characteristics in real time,which makes the circuit characteristics change accordingly.Compared with passive load controlled memristor,active load controlled memristor is more suitable for second harmonic signal.

关 键 词：等效电路 模型 荷控忆阻器 电路特性 

分 类 号：TN60[电子电信—电路与系统]