基于量子阱材料的光耦合微结构研究进展  

Research Progress of Optical Coupling Microstructure Based on Quantum Well

作　　者：叶新辉 YE Xin-hui(School of Materials Science and Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China)

机构地区：[1]上海理工大学材料科学与工程学院,上海200093

出　　处：《广州化工》2020年第16期9-11,共3页GuangZhou Chemical Industry

摘　　要：在长波红外探测领域中,GaAs/AlGaAs量子阱材料由于其均匀性和低成本,极具应用前景,然而,子带间跃迁选择定则的的限制导致量子阱不能吸收垂直入射光,通过引入微结构是增强光吸收的主要方法。本文在简述了量子阱原理及在长波红外波段的应用前景后,综述了近年来提高光耦合效率的一些新颖微结构,指出它们各自的优势以及存在的不足,分析了今后量子阱材料微结构的发展方向。In the field of long wavelength infrared detection,GaAs/AlGaAs quantum wells own great application prospects due to the uniformity and low cost.However,due to the limitation of the intersubband transition selection rule,quantum wells can not absorb vertically incident light.The improvement of microtructure is the main way to enhance light absorption.After briefly describing the principle of quantum wells and their application prospects in the long wavelength infrared detection,some novel microstructures that have improved optical coupling efficiency were reviewed.At the same time,some existing shortcomings that need us to improve and solve in the future were analyzed.

关 键 词：长波红外 量子阱 选择定则 光吸收 耦合效率 

分 类 号：TN215[电子电信—物理电子学]