一种高性能X波段GaAs开关滤波器芯片  

A High Performance X-Band GaAs Switching Filter Chip

作　　者：王胜福[1] 世娟[1] Wang Shengfu;Shi Juan(The 13th Research Institute,CETC,Shijiazhuang 050051,China)

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《半导体技术》2020年第8期592-596,共5页Semiconductor Technology

摘　　要：基于0.25μm GaAs赝配高电子迁移率晶体管(PHEMT)工艺,研制了一款高性能X波段四路开关滤波器微波单片集成电路(MMIC)芯片。芯片内集成了输入和输出单刀四掷(SP4T)开关、驱动器和带通滤波器,实现了开关滤波功能。输入和输出SP4T开关结构相同,各支路都采用串-并联混合形式实现。驱动器集成在片内,由一位低电平(0~0.4 V)或高电平(3.3~5.5 V)信号控制SP4T开关中某一支路的导通或关断。带通滤波器采用分布参数梳状线结构,开路端加载金属-绝缘体-金属(MIM)电容,减小滤波器尺寸的同时拓宽了其阻带带宽。该开关滤波器芯片频率覆盖9.85~12.4 GHz,尺寸为4.5 mm×4.5 mm×0.15 mm。探针在片测试结果表明,开关滤波器芯片4个支路的中心插入损耗均小于6.2 dB,通带内回波损耗优于17 dB,典型的带外衰减大于40 dB。Based on the 0.25 μm GaAs pseudomorphic high electron mobility transistor(PHEMT) technology, a high performance X-band four channel switching filter monolithic microwave integrated circuit(MMIC) was developed. The input and output single-pole four-throw(SP4 T) switches, drivers and band-pass filters were integrated in the chip, realizing the switching filtering function. The input and output SP4 T switches had the same structure, and each branch was implemented in a series-shunt hybrid form. The driver was integrated in the chip and was controlled by a low level(0-0.4 V) or a high level(3.3-5.5 V) signal to turn on or off a branch of the SP4 T switch. The distributed combline structure was used in the band-pass filter and the open end of band-pass filters was loaded by the metal-insulator-metal(MIM) capacitors, which reduced the size and broadened the stopband bandwidth of the filter. The ope-rating frequency of the switching filter chip covers 9.85-12.4 GHz and the chip size is 4.5 mm×4.5 mm×0.15 mm. The probe test results show that the insertion loss at center frequency of each channel is less than 6.2 dB, the in-band return loss is better than 17 dB, and the typical out-of-band attenuation is more than 40 dB.

关 键 词：GaAs赝配高电子迁移率晶体管(PHEMT) 单刀四掷(SP4T)开关 带通滤波器 开关滤波器 微波单片集成电路(MMIC) 

分 类 号：TN713[电子电信—电路与系统] TN40