化学法测定InxGa1-xN外延层中的In含量  

Determination of Indium Content in InxGa1-xN Epitaxial Layer by Chemical Method

作　　者：王雪蓉[1] 刘运传[1] 王倩倩[1] 周燕萍[1] 姚凯 马衍东 Wang Xuerong;Liu Yunchuan;Wang Qianqian;Zhou Yanping;Yao Kai;Ma YANDong(Insititute 53 of China Ordnance Industry Group,Jinan 250031,China)

机构地区：[1]中国兵器工业集团第五三研究所,济南250031

出　　处：《半导体技术》2020年第8期652-656,共5页Semiconductor Technology

摘　　要：采用熔融氢氧化钠对生长在蓝宝石衬底上的InxGa1-xN外延层进行化学腐蚀,通过深紫外光致发光光谱仪测量InxGa1-xN的激发光谱来控制其腐蚀过程,用硫酸和氨水对腐蚀InxGa1-xN后得到的的腐蚀溶液进行酸度调节,加入碘化钾、乙基紫与铟离子形成蓝色的离子缔合物,用苯将离子缔合物萃取至有机相,采用分光光度计测量腐蚀溶液在619 nm波长处的吸光度来计算外延层中的In含量。使用该方法测试6次,测试结果的标准偏差为0.25%,测量结果与卢瑟福背散射法的测量结果基本一致,说明该方法具有较高的精密度和准确度。该方法可用于InxGa1-xN外延层中的In含量的准确测量。InxGa1-xN epitaxial layer grown on the sapphire substrate was chemically etched by fusion sodium hydroxide.The etching process of InxGa1-xN was controlled by measuring its excitation spectra with the deep ultraviolet photoluminescence spectrometer.The acidity of the etching solution achieved after etching InxGa1-xN was adjusted with sulfuric acid and ammonia water.The potassium iodide,ethyl violet and indium ion were added to form blue ion association complex and it was extracted into organic phase by benzene.The absorbance of the etching solution at 619 nm wavelength was measured by spectrophotometer to calculate the indium content in the epitaxial layer.The standard deviation of the 6 tests results of this method is 0.25%,which is basically consistent with that of the Rutherford backscattering method,indicating that this method has high precision and accuracy.The method can be used for the accurate measurement of indium content in the InxGa1-xN epitaxial layer.

关 键 词：InxGa1-xN 分光光度法 化学腐蚀 化学法 缔合物 

分 类 号：TN304.26[电子电信—物理电子学]