基于PdO/Si异质结的近红外光电探测器  

Near-infrared photodetector based on PdO/Si heterojunction

作　　者：范琦 陈博瀚 左焕涣 吴燕 罗和昊 FAN Qi;CHEN Bohan;ZUO Huanhuan;WU Yan;LUO Hehao(Advanced Semiconductor Devices and Optoelectronics Integration Laboratory,School of Electronic Science and Applied Physics,Hefei University of Technology,Hefei 230009,China)

机构地区：[1]合肥工业大学电子科学与应用物理学院先进半导体器件与光电集成实验室,安徽合肥230009

出　　处：《电子元件与材料》2020年第8期27-32,63,共7页Electronic Components And Materials

摘　　要：为了探索PdO薄膜的光电性质,采用电子束和CVD高温氧化技术在N型Si上生长了PdO薄膜,使用X射线衍射仪(XRD)、拉曼光谱仪(RAMAN)和原子力显微镜(AFM)对薄膜的成分和形貌进行表征。研制了PdO/Si异质结光电探测器,并对探测器进行光电性能测试。实验结果表明,探测器具有优异的整流特性,在波长为970 nm的光照下,开关比高达9.8×10^3,并具有优异的空气稳定性和耐久性。因此当前器件在未来的NIR光电系统中具有巨大的应用潜力。In order to explore the photoelectric properties of PdO thin films,PdO thin films were grown on N-type Si by electron beam deposition and CVD high-temperature oxidation techniques.The composition and morphology of the film were characterized by XRD,RAMAN and AFM.PdO/Si heterojunction photodiodes were fabricated,and the photoelectric response characteristics of them were measured.The results show that the detector has excellent rectification characteristics.Under 970 nm light,this photodetector holds a large Ilight/Idark ratio of^9.8×10^3 with excellent air stability and durability.Therefore,the photodetector has great application potential in the future NIR photoelectric system.

关 键 词：光电探测器 氧化钯 异质结 近红外 

分 类 号：TN36[电子电信—物理电子学]